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The VRTDDB(Voltage-Ramping Time-Dependent-Dielectric- Breakdown),a reliability testing method for the gate dielectrics ,is proposed in this thesis. We used different bulks and dielec- tric materials,oxide thickness,peripheral conditions to evaluate the reproducibility of this testing method while it is applied in IC mass production. Provided that the oxide breakdown obeys the log-normal dis- tribution,the "electric field acceleration factor" is calculated. According to this parameter, this testing method is proved to be useful and faster than constant-field TDDB testing method. Using this proposed testing method, we can get high reproducibility for all kinds of gate dielectrics. We can also conclude that ONO, thinner SiO2 and SiO2 on N-Well have stable reliability. Finally, we compare the data measured by VRTDDB with that by TDDB, it is found that they are compatible. So, VRTDDB can be use as a testing method for gate dielectrics.
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