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A new double-sided silicon microstrip detector with coupling
capacitors and polysilicon bias resistors has been designed and
processed on 100mm silicon wafers. The double-metal structure
is also used to turn the output terminal of both sides in the
same direction. The pitch of P﹢-trips is 25μｍ and the pitch
of N﹢-strips is 50μｍ. The readout pitch of both are 50μｍ
and 100μｍ, respectively. The detectors are tested by
electrical measurement and illumination of infrared laser
diode. The electrical properties and the spatial response show
that these double-sided silicon microstrip detector do fit our
original requirements.
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