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A new double-sided silicon microstrip detector with coupling capacitors and polysilicon bias resistors has been designed and processed on 100mm silicon wafers. The double-metal structure is also used to turn the output terminal of both sides in the same direction. The pitch of P﹢-trips is 25μm and the pitch of N﹢-strips is 50μm. The readout pitch of both are 50μm and 100μm, respectively. The detectors are tested by electrical measurement and illumination of infrared laser diode. The electrical properties and the spatial response show that these double-sided silicon microstrip detector do fit our original requirements.
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