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Tris(trimethylsilyl)methylsilane was used as a single sou-
cursor for depositing beta-SiC thin films low pressure chemical
vapor deposition. Deposition of uniform on Si (111) substrate
was carried out at temperatures 873-1473 K in a re-asma-
enhanced hot-wall reactor.Morphology of the films there was
altered by deposition temperature and the precursorization
temperature.Their crystallinity could be improvedgen plasma was
used to assist deposition.The results indicated that when
deposition between 1073K and 1473K,there were two kinds of
growth mechanisms.Below 1273K the reactionsurface reaction
controlled and the energy of acti- vation was 28.8kcal/mol,
above 1273K the process was diffusion controlled.When hydrogen
plasma was used to assist the depo- sition,the energy of
activation was 22.8kcal/mol.Carbon andn distributions are
oniform in the films. Elementalwas characterized to be C/
Si=1.1-1.8.In general the Si/C ratios of the films were close
to 1 at high temper-of deposition.
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