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研究生:朱志熏
研究生(外文):Chu, Chi Hsing
論文名稱:高感度及寬頻多孔矽光感測器
論文名稱(外文):High sensitivity and wide band porous silicon photodetector
指導教授:李明逵
指導教授(外文):Lee, Ming Kwei
學位類別:碩士
校院名稱:國立中山大學
系所名稱:電機工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1994
畢業學年度:82
語文別:英文
論文頁數:80
中文關鍵詞:多孔矽光感測器量子效率
外文關鍵詞:Porous siliconPhotodetectorQuantum efficiency
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多孔矽的光激發光譜波長隨電解液中氫氟酸濃度增加而呈階梯狀增加、隨
電解電流密度增加而呈階梯狀減少、隨電解時間增加而減少,利用簡單的
蝕刻步驟和量子化的表面空乏區寬度的概念,我們提出一個多孔矽的成長
機構來解釋上述現象。我們將多孔矽應用於光感測器的製作,一般而言,
多孔矽光感測器的切入電壓約 0.8伏特左右,理想係數在 0.7到 1.7之間
,而其在紫外光區的頻譜響應是由鋁─多孔矽的蕭特基接面造成的,操作
在 2伏特的逆向偏壓之下,波長300 nm的量子效率通常高於 6000%,而
在 500─1100nm的頻譜響應是由多孔矽的光吸收造成的,此波長範圍的量
子效率約 90%─100%,在1700nm附近的頻譜響應是由多孔矽和矽的導電帶
能差,ΔEc,的光吸收造成的,其量子效率通常高於500%,在1700nm附近
的頻譜響應是由多孔矽─矽的接面剩餘能隙,Er,的光吸收造成的,其量
子效率通常高於350%,而且由於多孔矽中不同的矽柱粗細造成不同的能隙
,ΔEc及Er也會有一分佈,所以,多孔矽光感測器可以同時感測寬頻的光
。另一方面,由於多孔矽層是本質層,其作用類似 p-i-n光感測器中的
"i"層,並且,矽柱的直徑非常小,小電壓即會造成很大的電場,產生累
增的現象,大大地提高元件的增益,所以,多孔矽光感測器是高感度及寬
頻的光感測器。
We applied porous silicon to the fabrication of photodetect-
or. Normally, the cut-in voltage of PS photodetector is
about 0.8 V and ideality factor is 0.7 - 1.7. The short
wavelength (ultraviolet) spectrum response of PS photodetector
centered at 300 nm is dominated by the optical absorption of
Al-PS Schottky junction. And the quantum efficiency at -2 V
is usually higher than 6000% at 300 nm. The highest one of
our works is 66100%. Porous silicon is a direct energy bandgap
material, and its PL spectrum is ranging from 580-950 nm. The
spectrum response with wavelength ranging 500-1100 nm (band-
edge of Si) is due to the photon absorption of the PS
layer. The quantum efficiency in this wavelength region is
about 90%-100%. The quantum efficiency centered at 1700 nm is
resulted by ΔEc, the conduction-band offset. And the
optical response from about 1300-1400 nm is due to Er, the
interface residual gap. Because of the quantum effic- iency
effect, different Si wire size leads to different energy
bandgap. ΔEc and Er are of a distribution, too. So, all of
the spectrum response are broad-band, and the PS photodetector
would detect a broad wavelength band at the same time. The PS
photode- tector therefore is a full color photodetector. The
textured su- rface of PS layer would reduce the reflection of
incident light and it will increase the quantum efficiency. In
addition, the PS layer is an intrinsic layer and it acts as
the "i" layer in p-i-n photodetector. The voltage drop in
the Si wire of PS layer would result in a locally strong field.
The gain of the PS phot- odetector would be greatly enhanced
by avalanche in PS layer. The PS photodetector hence
exhibits very high sensitivity to full color, and it is a
high sensitivity and wide band photodet- ector.
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