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研究生:黃啟川
研究生(外文):Huang, Chi-Chun
論文名稱:液態電位控制磊晶方法對CuInSe2薄膜成長與調變之研究
論文名稱(外文):Compositional Control Of CuInSe2 Thin Film Grown By Liquid Phase Electroepitaxy(LPEE)
指導教授:翁恆義張祖辛
指導教授(外文):Ueng Herng-Yie Chang Tsu-Hsin
學位類別:碩士
校院名稱:國立中山大學
系所名稱:電機工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1994
畢業學年度:82
語文別:中文
論文頁數:80
中文關鍵詞:銅銦二硒電位磊晶硒化銅
外文關鍵詞:CuInSe2Electrodepositioncopperselenide
相關次數:
  • 被引用被引用:1
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銅銦二硒是I-III-VI 族半導體成員之一且以閃鋅結構中之 chalcop-
yrite 相為主。因具良好之光電特性,故在光電元件的製作,它是非常好的
材料o利用真空製得之銅銦二硒薄膜,因成長速度慢,高成本o 故不適量產o
我們利用液態電位磊晶方法,重從含有氯化銅,氯化銦及硒酸的水溶液可製
得銅銦二硒薄膜,其成長速度快,低成本,薄膜均勻且薄膜之組成可由溶液
之離子濃度及作用電位來控制o其缺點為,由此法製得之薄膜品質差o將其
放在高溫退火可明顯改善薄膜性質o 因而只要將銅銦二硒薄膜品質提昇到
可製光電元件程度,就可大量生產o

CuInSe2 is a member of the I-III-VI group of semiconductors and
exists in the chalcopyrite phase belonging to the zinc blen- de
family. Its optical and electric properties and durability m-
ake it a valuable photovoltaic material. Economical analysis of
solar cells indicates the necessity of producing
polycrystalline thin film to reduce costs, and CuInSe2 is
suited to this. Of the various techniques available, cathodic
electrodeposition of the three elements was chosen as it is in
principle simple, speedy and inexpensive. The technique has
often been associated with p- roblems such as
irreproducibility, nonstoichiometry and structu- ral
nonuniformities, however, these were overcome. Elemental el-
ectrodeposition was achieved from aqueous solutions containing
CuCl2, InCl3 and H2SeO3 and depend on the concentration and the
applied potential. Structural characterizations were carried
out by X-ray diffraction and scanning electron microscopy
studies. These confirmed the presence of chalcopyrite phase,
near stoich- iometric, uniform CuInSe2.

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