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研究生:林建志
研究生(外文):Lin Chien-Chih
論文名稱:脈衝式準分子雷射製備多層薄膜的臨場製程與電性分析
論文名稱(外文):In-Situ Growth and Electrical Properties of Laser-Deposited Multilayer Thin Films
指導教授:孫澄源
指導教授(外文):Sun Cherng-Yuan
學位類別:碩士
校院名稱:國立臺灣科技大學
系所名稱:工程技術研究所
學門:工程學門
學類:綜合工程學類
論文種類:學術論文
論文出版年:1994
畢業學年度:82
語文別:中文
論文頁數:116
中文關鍵詞:雷射鍍膜超導體釔鋇銅氧薄膜電特性超導/半導混成元件
外文關鍵詞:pulse laser depositionsuperconductorYBCOcurrent-voltage
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以準分子雷射剝鍍釔穩態氧化鋯(YSZ)與鋯酸鋇(BZO)為緩衝層於單晶 (
1 0 0 ) 之矽晶面上,經X-ray繞射儀分析,二者均呈現C-軸優列方向性
。將釔鋇銅氧化物超導靶材剝鍍於此二種不同緩衝層之矽基板上,均可得
C-軸結晶取向的超導薄膜,由於BZO對 YBCO有較 YSZ高的晶格不匹配與較
大的熱膨脹係數差額,故其上之超導薄膜電性較低劣, 以BZO及YSZ為緩
衝層之超導薄膜其臨界溫度分別為70K ,85K。選擇鑭鍶鈷(La0.5Sr0.5
CoO3)作為鈮摻雜鈦酸鍶之電極,以形成 YBCO/Nb:STO/LSCO/MgO 之超導
體/半導化鈦酸鍶界面,結果得到 {100}結晶取向的LSCO與Nb:STO薄膜;
而YBCO呈現C-軸優列方向性其臨界溫度高達91.5K。對YBCO/YSZ/n-Si之結
構,利用四點量測法求取釔鋇銅氧超導薄膜與矽基板二側之電流-電壓特
性,其曲線呈現整流形之特性,且發現若在YBCO薄膜品質越好,操作溫度
越低與較薄的緩衝層之條件下,其整流特性越明顯;對於釔鋇銅氧超導薄
膜/0.5wt%鈮摻雜鈦酸鍶單晶基板之結構,我們得到C-軸優列方向性且臨
界溫度92K之薄膜,電性量測發現介面為歐姆接觸,此為鈮攙雜濃度過高
之結果。

High quality YBCO thin films on n-type silicon wafer with YSZ
and BZO buffer layers were suscessfully achieved by means of
pulsed laser deposition(PLD). The XRD patterns indicate that
YSZ and BZO buffer layers were (100) preferred orientation,
and YBCO was C-axis preferred orientation. However, the
electricity for YBCO with BZO buffer layer(Tco=70 K) was
inferior to YSZ buffer layer (Tco=85 K), it is due to larger
lattice mismatch and thermal coefficient. The other type, YBCO/
Nb:STO/LSCO/MgO multi-layer structure was formed to recognize
the structure and electricity. By controlling the deposition
parameters, the best semiconductor-like A-axis Nb:STO and
electrode LSCO were obtained with the analysis of XRD patterns.
The subsequent growth of YBCO thin films on Nb:STO/LSCO/MgO
substrates were of C-axis preferred orientation and high
critical temperature, Tco=91.5 K. The current-voltage
measurements with four terminals method for YBCO/YSZ/Si
structure showed a rectifying characteristics. Among various
conditions, higher quality superconductivity, lower operation
temperature and thinner buffer layer will induce superior
rectifying. In YBCO/ 0.5wt﹪Nb:STO superconductor-semiconductor
junction, the C-axis orientation and high critical temperature
(Tc=92K) YBCO thin film was also abtained. The current-voltage
curves showed linear characteristics.

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