臺灣博碩士論文加值系統

磁光記錄材料,非晶質鋱鐵鈷合金薄膜,在不同基版上(Si, 玻璃, AlN層)
上其磁光,磁阻與頑磁力的表現,呈現不同特性.頑磁力方面,不論何種底層
材料,皆隨合金膜厚之減小而增大;於以AlN為底層時,相同膜厚下,頑磁力
高出以Si或玻璃為基版時約 2kOe.柯爾旋角,隨磁光層膜厚的增加而漸增,
至600埃後趨於穩定值約0.2度;磁光層與基版間加一AlN層之結構時,具光
學性增強效應,膜厚小於600埃時,比不加AlN層之結構具較大之柯爾角.在
磁光柯爾角對波長(300-900nm)的變化,於350nm處出現一峰值,以Si為基版
時,最大值可達1.01度;以玻璃為基版,則最大只有0.2度.磁阻的變化,於磁
場平行膜面時,室溫下,磁場平行電流方向時的電阻變化率與磁場垂直電流
時的電阻變化率之差,在以Si為基版時約為為以玻璃為基版的 10 倍.磁場
垂直膜面時,磁阻變化出現似磁滯特性,其頑磁力大致與磁光所得相近;以
玻璃為基版時,電阻變化率與膜厚無明顯關係,數量上約0.04 %;以Si為基
版時,電阻變化率隨合金膜厚而變大,數量上約有1%,高出以玻璃為基版時
至少20倍.

A seris study of magneto-optical and magnetoresistant
properties of amorphous TbFeCo alloy thin film on different
substrates (Si,Corning glass and AlN buttom layer) found some
differences in the behaviors like coercive force, Kerr angle
and anisotropic magnetoresistance(AMR). The coercive foce
increaces as the thickness of TbFeCo layer decreases in all
series of samples with different substrates or buttom layer.
But the structures AlN layer as buttom layer show higher
coercive force, which are about 2kOe higher than those without
buttom layer. The Kerr angles increasws as the thickness of
TbFeCo layer increases until 600 angstroms reach a value about
0.2 degree. Those with AlN as buttom layer show better optical
enchancement. The Kerr spectrum results show the highest value
reach 1.01 degree at 350nm during the experiments. With Si as
substrate, AMRs are 10 times higher than those on glass
substrates when magnetic field parallel to the film surface.
The MRs show hysteresis loop, when magnetic field perpendicular
to the film surface, and the change rate, when Si as substrate,
is about 20 times higher than those on glass substrates.