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研究生:謝耀能
研究生(外文):Hsieh, Y. N.
論文名稱:微電子構裝低溫燒結氮化鋁多層陶瓷基板之研究
論文名稱(外文):Low Firing AIN Multilayer Ceramic Substrate for Microeletronice Package Application
指導教授:陳立軒陳立軒引用關係王欽戊
指導教授(外文):Chen, L. S.Wang, C. W.
學位類別:碩士
校院名稱:義守大學
系所名稱:電機工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1995
畢業學年度:83
語文別:中文
論文頁數:83
中文關鍵詞:氮化鋁玻璃基板
外文關鍵詞:aluminum nitrideglasssubstrate
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氮化鋁因具有高熱傳導率,低介電常數且其熱膨脹係數與si晶相近等優點,因此在多層陶瓷基板上是最具潛力的材料。可惜,其燒結是非常困難,非在2000℃以上無法燒結緻密,且在1000℃以上燒結時,又極易被氧化成氧化鋁。本研究是利用氮化鋁粉末為主要原料,添加入低軟化點玻璃,在空氣中進行低溫燒結。使用玻璃種類包含氟化物玻璃,硼酸玻璃,硼矽酸玻璃等系列,分別以50-90wt%之添加量與氮化鋁混合燒結。控制燒結之條件為:溫度範圍:700-850℃,恆溫範圍:15-360分鐘。燒結後之試片則分別觀察與量測其緻密度、晶相結構、顯微組織、介電性質、熱性質及機械性質,藉以瞭解並探討其燒結行為與燒結體之物理特性。再則選擇燒結狀況較好之粉末,與黏結劑依適當比例混合,再利用刮刀成型技術製成多層基板。
研究結果發現,氮化鋁添加BG4、BG5玻璃系可於空氣中以750℃左右低溫環境下燒成。添加65wt%的BG4,其燒結體線收縮率超過11%,相對密度在90%-92%之間。在1MHz測量條件下,其介電常數值範圍在4.5-5.5之間,介電損為低於0.5%,而熱膨脹係數值為介於4.3x10-6/℃及6.3x10-6/℃之範圍。且經XRD分析,燒結體仍維持氮化鋁晶相結構,而在SEM斷面顯微結構觀察分析,可以很清楚看出在燒結體中,玻璃已完全熔融,而氮化鋁顆粒大部分都被玻璃所包圍,這可看出BG4玻璃之液相對於氮化鋁顆粒具有良好的潤濕性,因而可促進氮化鋁之燒結,做為多層微電子構裝之陶瓷基板材料。
在基板製程方面,將上述組成粉末與黏結劑充分混合,利用刮刀成型技術,可刮出厚度約0.5-0.6mm之生胚片,再裁切成30mmx30mm正方型的小胚片,將三層胚片利用等均壓疊壓後,再經最佳燒結溫度及時間燒結後,可得長寬約26.7mmx26.7mm,厚度約1.4mm之三層陶瓷基板。


Owing to its high thermal conductivity, low dielectric constant, and thermal expansion coefficient matching Si chip, aluminium nitride has attracted much attentions and is considered to be the most promising substrate material for microelecironics applications. However, the AIN powder can not be well densified under the temperature range lower than 2000℃. Besides, at temperature higher than 1000℃, oxygen atoms existing on the surfaces of AIN grain will diffuse into the grain resulting in the decomposition of the aluminium nitride. In order to obtain low temperature sinterable AIN compacts, low softing point glass were added in this study.
Various kinds of borosilicate glass were prepared. After mixing with AIN powders, the mixtures were sintered at 700℃ to 950℃, from 15 to 360 minutes in air.
The composition with 65wt% borosilicate glasses added can achieve achieve a shrinkage higher than 11%, relative density is between 90% and 92%. The dielectric constant is between 4.5 and 5.5, the dielectric factor is lower than 0.5% measured at 1MHz, and the thermal expansion coefficient is between 4.65x10-6/℃ and 4.65 x10-6/℃. From the X-ray diffraction analysis, aluminum nitride still retained the main crystalline. The phase wetting of borosilicate classes to AIN surface was examined by SEM observations.
In the fabrication of multilayer substrates, the ductor-blade technique was employed, substrates process, we mixed compose powder with binder and employed, 30mmx30mm squares of the samples were cut from the green tape, then piled up them to form the 3 layer substrates. After firing, we obtained about 26.7mmx26.7mm and the layer of 1.4mm of the 3-layer ceramic substrates.

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