臺灣博碩士論文加值系統

絕緣閘雙載子電晶體(IGBT)為近來新開發的一種功率元件, 其結合了功率
絕緣閘場效電晶體及功率雙載子電晶體的優點, 而被廣泛地應用。目前的
模擬軟體尚未廣泛地提供此一新元件的模型, 故本文首先引用絕緣閘雙載
子電晶體巨觀模型, 並以模擬軟體--設計中心(Design Center) 建立此模
型。為增加絕緣閘雙載子電晶體可使用之電壓及電流範圍, 本文再來根據
已建立的絕緣閘雙載子電晶體模型, 進行各種可能的串並聯方法之模擬
。(1)串聯技術:為使各串聯絕緣閘雙載子電晶體元件之分壓均勻, 本文發
現在串聯的絕緣閘雙載子電晶體上並聯一 RCD緩衝器及一適當的均壓電
阻, 即可達到良好的均壓效果。(2)並聯技術:在並聯絕緣閘雙載子電晶體
的射極各加一回授電阻, 可使電流達到均流的目的, 但消耗在回授電阻的
功率損失非常大, 並不適用於實際情況。為改善此一問題, 本文提出另一
種電流回授架構。以上串並聯技術, 經模擬及實驗證明可分別達到均壓及
均流的目的。

The IGBT is a new developed device in recent years, and is a
hybrid power device that combines the advantages of a
POWER MOSFET and a BJT. Because of the advantages of IGBTs,
they have wide applications in many fields. However, the IGBT
device model is still not available in most circuit
simulation softwares. A practical IGBT macro model is used
first in this thesis and will be built by simulation software
-- Design Center. To extent the rating ranges of current
and voltage of IGBTs, the possible serial and parallel
methods can be simulated by using the built IGBT model. (1)For
serial techniques, it is found that the voltage sharing
can be get to balance by adding a RCD snubber and an
adequate balancing resistor in each IGBT in series.(2)For
parallel techniques, it is found that the current sharing
can be get to balance by adding a feedback resistor in
each paralleled IGBT's emitter. But the method can not be
used in the practical situations because of large power
losses in the feedback resistances. Another parallel
scheme using current feedback method is developed in this
thesis. The above serial and parallel techniques are
proved that the currents for paralleled IGBTs and the
voltages for IGBTs in series can be balanced by simulations
and experiments.