臺灣博碩士論文加值系統

COVER
CONTENTS
Abstract (in Chinese)
Abstract (in English)
Acknowledgement (in Chinese)
Contents
Figure Captions
1. Introduction
1.1 overview
1.2 Outlines
2. Fabrication of Vertical Cavity Surface Emitting Lasers
2.1 Introduction
2.2 Principle of Device Design
2.3 Device Processing
2.4 Visible InGaPInGaA1P VCSELs
2.4.1 Structure Design
2.4.2 Pulsed Characteristics
2.4.3 Continuous-wave Characteristics
2.4.4 Further Prospects
2.5 0.85μm GaAsA1GaAs VCSELs
2.5.1 Structure Design
2.5.2 Device Characteristics
2.6 0.98μm InGaAsGaAs VCSELs
2.6.1 Structure Design
2.6.2 Device Characteristics
2.7 Summary
3. Reliability of GaAsA1GaAs Quantum Well VCSELs
3.1 Introduction
3.2 Reliability Analysis
3.2.1 Burn-in
3.2.2 Weibull Distribution
3.2.3 Accelerated Testing and Arrhenius Model
3.2.4 Setup of Aging Experiments
3.3 Lifetime of 0.85μm VCSELs
3.3.1 Aging Tests
3.3.2 Mean-time-to-failure
3.3.3 Characteristics of Aged Devices
3.4 Summary
4. Reliability of InGaAsGaAs Strained Quantum Well VCSELs
4.1 Introduction
4.2 Effect of Implant Energy
4.3 Effect of Rapid Thermal Annealing
4.4 Effect of Device Dimension
4.5 summary
5. Failure Mode Analysis
5.1 Degradation Mechanisms of Diode Lasers
5.2 Gradual Degradation of VCSELs
5.3 Sudden Failure Experiments
5.4 Sumary
6. Conclusion
6.1 Conclusion
6.2 Suggestions of Future work
References
Figures
Appendix A Device Processing of VCSELs
Appendix B Semi-insulating Iron-droped InP Grown by Lp-MOCVD
Appendix C.1 Doping of InGaP Grown by LP-MOCVD
Appendix C.2 Magnesium Doping of InGaA1P Grown by LP-MOCVD
Vita (in Chinese)
Publication List