臺灣博碩士論文加值系統

本文係使用反應性射頻磁控濺鍍法於不同的基板上，如康寧玻璃、矽晶片
、砷化鎵、鈮酸鋰以及二氧化矽覆膜之矽晶片，成長C 軸排向之氮化鋁薄
膜，並藉由改變濺鍍壓力、濺鍍功率、氮氣濃度比及基板溫溫度，以獲得
高C 軸排向與平整度良好的氮化鋁薄膜，作為未來聲光元之基礎。此外，
藉由X 光繞射分析儀和掃描式電子顯微鏡來觀查氮化鋁薄膜晶體結構之排
向性，表面組態之晶粒大小與平整程度；同時利用穿透式電子顯微鏡與二
次離子質譜儀可分析薄膜晶體之顯微結構及縱深方向的元素分析。由XRD
分析顯示，當氮氣濃度百分比高達75% 且腔室壓力控制在 7.5~15mTorr
左右，隨著濺鍍功率的增加與基板溫度的適當控制，可成長出透明無色且
表面平滑的C 軸排向氮化鋁薄膜。另外，由SEM 與 TEM 的分析可知，沉
積的C 軸排向氮化鋁薄膜其為柱狀結構且晶粒大小約為 80~100 nm並計算
出沉積速率約為1.3~1.5μm/hr 。最後，以 SIMS分析發現在氮化鋁薄膜
與基板的交界處會有Ar離子的堆積，同時有微量的碳和氧的雜質元素會存
在於氮化鋁薄膜內。

C-axis oriented aluminum nitride (AlN) thin films on different
substrates, such as Corning glass, Si(100), GaAs(100), LiNbO3,
SiO2/Si(100), are prepared by reactive RF magnetron sputtering
The dependence of highly c-axis preferred orientation and
surface morphology of AlN thin films on various sputtering
pressure, RF power, N2 concentration and substrate temperature
for developing the acoustic-optical (AO) devices in the future.
In this study, the crystallography, grain size and morphology
of AlN thin films are characterized by X-ray diffraction (XRD)
and scanning electron microscopy (TEM). Meanwhile,transmission
electron microscopy (TEM) and secondary ion mass spectroscopy
(SIMS) are adopted to determine the films microstruture and
depth-concentration profiles. The XRD patterns show that
increasing N2 concentrations up to 75% , sputtering pressure of
about 7.5~15 mTorr and substrate temperature of more than
350℃, colorless and transparent c-oriented AlN films can be
obtained with increased RF power. Futhermore, the morphology
characterizations observed by SEM and TEM show that the texture
of deposited c-axis oriented AlN films are columnar structure
and grain size is about 80~100 nm. The deposition rate can be
estimated 1.3~1.5μm/hr. Then, SIMS mesaurements show that
Ar+ will stack at the interface between film and
substrate. Meanwhile, little carbon and oxgen
contaminations will be found in the films layers.