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The electrooptic effects originate from the change of index of refraction when an external electric field is applied to a material.The control of the amplitutde, phase, mory and direction of propagation of optical wave in the material can all be related to the change of index of refraction. The PLZT material has nowadays been applied to some electrooptic devices due to its ferroelectric properties, high transparency and its well-performed electrooptic effects even in the form of non- single crystal. However, the ceramic materials have always exhibited serious problems such as fatigue and aging phenomena which may be mainly caused by large applied voltage. If we can manage to enhance the electrooptic effects of the material, then the external voltage applied can be made comparably lower, and thus the aging problem can be reduced considerably。The enhancement of the electrooptic effects with lower operating voltage can be realized in the fabrication process of the material. In this thesis, we make some measurements on PLZT (9.5/65/35) coated with SiO2 and gold thin films of low constant and weak conductivity using co-planar electrode The results show that the component perpendicular to the of the incidenting light (z-direction) of the applied electric field is enhanced considerably due to the weak dielectrictiy of the thin film layer. The optical retardations of sample are observed to increase 35% by coating with a SiO2 thin film ,and 57% by coating with a gold thin film. The half-wave voltage is decreased, the operating voltage is decreased, and the fatigue and aging phenomena in devices are reduced considerably.
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