本實驗利用超音波噴霧裂解法(Spray Pyrolysis),以異丙烷氧鈦Ti(i-
C3H7O)4,醋酸鑭(CH3COO)3La.xH2O,醋酸鉛(CH3COOH)2Pb.3H2O為原料在n-
type(100)的矽晶片上沉積 Pb1/2-xLa2x/3TiO3薄膜(簡稱PLT).實驗
藉改變基板的溫度,反應劑濃度等參數,以探討薄膜的成長率.折射率.晶體
構造.微結構.表面型態和電性的影響,以找出最好的成長參數.由實驗結果
顯示,薄膜中鉛及鑭含量的多寡直接的就影響到PLT薄膜的電性. 折射率.
結晶性.晶粒大小及形狀,而沉積溫度.反應劑濃度及退火都會影響到膜中
鉛及鑭含量的多寡,而以沉積溫度560degree和反應劑中Xnominal=0.33時,
所沉積的膜最理想,在此條件下的漏電流較小,介電常數較高.

Ultrasonic spray pyrolysis has employed in this study to
deposite PLT thinfilm on n-type silicon wafer using Ti(iC3H7O)4,
Pb(CH3COO)2.3H2O,and La(CH3COO)3.xH2O as reactants. Experemental
parameters, including of substract temperature and reaction
solution concentration are varied to investigate their effect on
growth rate, refractive index, crystal structure,surface
morphology, and electric propertis in order to obtain the best
processing condition for future application. Experemental
results reveal that lanthanum and lead contents in the PLT thin
films affect stronghly the PLT thin film quality of electric
properties, refractive index, crystal structure, grain size and
grainshape; while the deposition temperature, reactant
concentra-tion and anneal condition determine contents of lead
and lanthanum in the PLT thin film.The most favorable condition
for thin film deposition includes the solution concentration
4.95*10-3M in Pb(1/2-X)La(2/3X)TiO3 ,Xnominal=0.33, and the
deposition temperature, 560 degree. Under this reaction
condition, the samples of lower leakage current densities and
higher dielectric constants are observed.