本研究以高速鋼(SKH51)為基材，探討基材經離子氮化處理或施加
TiAl中介層對直流反應磁控濺鍍TiAlN薄膜之性質的影響。 在氮化研究中
，以不同氮氣比例為變數；在施加TiAl介層實驗中，以不同介層厚度為變
數。 在基材氮化處理的
研究中，發現基材表面硬度、耐磨耗性質都隨氮氫比例增加而提高。在被
覆TiAlN於氮化基材後，發現TiAlN薄膜的表面視硬度隨氮氣比例的增加而
增加。刮痕測試中，發現TiAlN被覆於氮化基材者皆比被覆於高速鋼基材
者有較大的臨界荷重，但隨基材的氮氫比例的增加，臨界荷重卻有滑落的
情形。在磨耗測試中顯示薄膜的耐磨耗性隨氮氣比例的增加而增加，且以
氮氣比例為60％有最佳的耐磨耗性質。 在TiAlN施
加TiAl中介層的實驗中，於X-ray分析中發現TiAl與TiAlN具有明顯
之(111)優選方向，且兩者角度相近，故推測TiAl與TiAlN較易形成半契合
型界面。在經由GDS分析，發現TiAl層中有氮原子的擴散。由刮痕測試與
磨耗測試中發現施加介層之TiAlN比無介層者具有較高的臨界荷重與耐磨
耗性，並以介層厚度為1um之薄膜為最佳。

TiAlN films were deposited on high speed steel (H.S.
S.) by reactivemagnetron sputtering. The effects of plasma
nitriding of substrate and TiAlinterlayers on the TiAlN films
were investigated. The hardness
and wear resistance of nitrided substrate were
substantiallyimprove with increasing N2/(N2+H2) ratio in
nitriding atmosphere. The criticalloads of TiAlN films on
nitrided H.S.S. were higher than that on untreatedH.S.S. in
scratch test. Results also indicated that the films were
lessadherent to H.S.S. substrates as the N2/(N2+H2) ratio
increased in nitridingatmosphere.
XRD analysis showed that both TiAl and TiAlN films have
strong (111)preferred orientation. A semicoherent interface
was expexted since both the(111) d-spacings were very close. GDS
analysis indicated that the nitrogenatoms in TiAlN film
would diffuse into TiAl interlayer in depositing process.
Optimized critical load and wear resistance of TiAlN/H.S.S.
were obtained asan 1 um TiAl interlayer was introduced.