本實驗採用超音波輔助的噴霧裂解法,以異丙烷氧鈦,正丙烷氧
鋯以及醋酸 鋇為反應原料 酒精及水為反應溶劑,在n-type的矽基板
上沉積鋇鋯鈦(BZT)薄膜,在實驗中藉以改變沉積時基板的溫度以及反應溶
液的相對濃度來探討實驗參數對薄膜沉長速率,計量比,折射率,晶體 結
構,表面形態,微結構和電性(漏電流及介電常數)的影響,並且找出最佳的
成長參數,期能獲得高品質的薄膜.從實驗的結果顯示出,薄膜中鋇原子的
含量有普遍偏低的情形,但其隨沉積時基板溫度的增加薄膜中鋇原子的含
量有增加的趨勢,同時薄膜的晶體結構,表面形態和微結構也隨溫度的上升
有明顯的變化.以酒精為溶劑的溶液其沉積所得相對介電常數介於30-70之
間,高溫沉積的薄膜其介電常數較高,漏電流亦有較好的性質,因此在高溫
沉積所得的薄膜品質較為理想.退火處理對於薄膜的性質有相當顯著的影
響,在電性方面退火處裡後薄膜的相對介電常數介於80-140之間,因此退火
處理對於介電常數有相當的改善.以水為溶劑的鋇原子反應溶液,從實驗結
果顯示出,其薄膜成長速率較以酒精為溶劑者快若是配合反應溶液分別成
長的方法,則在其成長的薄膜中有較佳的原子比例,但由其表面形態及微觀
結構可知,其結構佳且缺陷過多,導致其電性的結果較以酒精為溶劑者差.

Ultrasonic spray pyrolysis has been employed in this
study to deposit BZT thin films on n-type silicon wafer
using Ti(i-C3H7O)4, Zr(n-C3H7O)4 and (CH3COO)2Ba as
reactants. Major experimental parametersare the substrate
temperature and reaction solution relative concentration,which
affect the growth rate,stoichiometric composition,
refractiveindex, crystal structure, surface morphology and the
electrical properties(leakage current and dielectric constant).
The process is characterizedand optimized in order to obtain the
best processing condition for future application. Experimental
results indicate that the Ba/ZrTi atomic ratio in thin films is
lower than ideal and the Ba atomic ratio increases with growth
temperature.The crystal structure and surface morphology are
also improved for growths high temperatures. BZT thin films
deposited in high temperatures have better dielectric constant
and leakage current. After annealing, the dielectric constant
of BZT thin film have increased by a factor of about 2. Using
water as the solvent of the Ba reactant one canraise growth
rate. When the reaction solution are separately introduced into
the chamber the Ba atomic ratio in the films enhanced, but the
morphology, microstructure and the electrical properties of the
thin films become deteriorated, because of defect generation.