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研究生:黃國欽
研究生(外文):Kuo-Chin Huang
論文名稱:電漿氫化影響多晶矽薄膜電晶體特性與可靠度之研究
論文名稱(外文):A study of the plasma Hydrogenation effect on the Character- -istics and Reliability of the Poly-Silicon Thin Film Transistor
指導教授:方炎坤方炎坤引用關係
指導教授(外文):Yean Kaun Fang
學位類別:碩士
校院名稱:國立成功大學
系所名稱:電機工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1996
畢業學年度:84
語文別:中文
論文頁數:120
中文關鍵詞:電漿氫化薄膜電晶體電應力天線效應紫外線幅射
外文關鍵詞:plasma hydrogenationthin film transistoreletrical stress
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電漿氫化製程對多晶矽薄膜電晶體特性與可靠度所造成之影響,是本篇論
文研究的重點。藉著電應力(Vds=-15V,Vgs=OV)的施加,我們討論氫於元
件特性中所扮演的角色。充分氫化之後的多晶矽薄膜電晶體其電應力後
GIDL有明顯的改善而未氫化的多晶矽薄膜電晶體則無。我們推論,這是由
於多晶矽薄膜電晶體內未鍵結的氫原子在電應力下受到熱電子的撞擊而對
附近缺陷。此外,我們討論電漿中發光放電所伴隨產生的紫外線對元件特
性造成之損害。並提出一種有效解決的方法。即於元件通道層上方覆蓋一
層與通道等寬的金屬線。實驗證明,氫化之後,有覆蓋金屬線的多晶矽薄
膜電晶體有極佳的特性:subthreshold swing為112mV/dec而漏電流則低
至20fA。最後,我們亦討論電漿氫化過程中,因天線效應所導至的閘極氧
化層充電損害,由實驗結果知:天線面積愈大者,對元件特性與可靠度的
損害愈大。除此之外,若天線連接至源極,實驗數據顯示,亦會產生閘極
氧化層充電效應而對元件特性與可靠度造成不可忽視的損害。這個發現,
提供將來設計多晶矽薄膜電晶體靜態隨機存取記憶體等電路一項重要的考
量,使其能符合更高速,更低功率消耗的目標.

The effects of plasma hydrogenation on the characteristics and
reliability of the polysilicon TFT's have been investigated in
this paper in detail. Using electrical stress (Vds=-15V , Vgs=0
V) on the TFT's , we can realize the role of hydrogen on the
characteristics of the polysilicon TFT's. After stress , the
gate induced drain leakage current (GIDL) is reduced for the
TFT with a hydrogenating time longer than 8 hours. We propose a
model to explain the above pphenomena .Based on the response of
the device parameters to the progress of hydrogenation. It is
concluded that the midgap states have a faster response to
hydrogenation than tail states . In addition , we find an
efficient way to suppress UV damage on the characteristics of
the polysilicon TFT's during plasma hydrogenation. That is , if
the channel region is shielded by a metal line with the same
width of the channel , the polysilicon TFT can be free from UV
damage during the plasma hydrogenation.After hydrogenation,the
metal-shield TFT's show the excelent subthreshold swing of
112mV/dec ,and its leakage current can be as low as 20 fA .
Finally , the gate oxide charging damage due to the antenna
effect during plasma hydrogenation has been discussed . From
the experimental results , it is find that the characteristics
and reliability of the polysilicon TFT's is deteriorated with
the increasing antenna size andthe antenna connected to source
will result in the gate oxide chargingdamage also .The result
provides a consideration in designing TFT SRAM in order to meet
the future low power dissipation ,high speed requirement.

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