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研究生:吳青正
研究生(外文):Wu, Chin-Jen
論文名稱:用電子迴旋共振化學氣相沈積技術以矽烷,氧及四氟化碳成長低介電常數氟氧化矽層之研討
論文名稱(外文):The Study of Low Dielectric Constant Fluorinated Silicon Oxide with SiH4, O2 and CF4 Gases by Electron-Cyclotron-Resonance Chemical Vapor Deposition Technique
指導教授:張國明
指導教授(外文):Kow-Ming Chang
學位類別:碩士
校院名稱:國立交通大學
系所名稱:電子研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1996
畢業學年度:84
語文別:中文
論文頁數:51
中文關鍵詞:矽烷低介電常數吸水性
外文關鍵詞:SiH4Low kWater Absorption
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在這篇論文中,我們將研討以氟氧化矽為主之金屬間隔介電物質。此氟氧
化矽層以電 子迴旋共振化學氣相沉積技術,用矽烷,氧及四氟化碳為反
應氣體來沉積。因為四氟化碳並不是直接參與氟化作用的原料,所以氟化
的機制將類似於四氟化碳電漿對矽氧層的蝕刻 。而此矽氧層的成長速度
視沉積和蝕刻反應的對比而定。此外,製程溫度對氟濃度的多寡 有相當
的影響。 從紅外線傅利葉轉換頻譜分析儀(FT-
IR)和X光光電子頻譜分析儀(XPS)來看,我們發現沉積時增加四氟化碳和
矽烷的流量比(CF4/SiH4),氟的含量將上升。而矽氟鍵結(Si-F) 亦將改
變矽氧層的性質。由FT-IR 譜線來看,矽氧鍵(Si-O)頻率位置的偏移跟矽
氟鍵和矽氧鍵的比例(Si-F/Si-O)有線性的正比關係。此關係亦反應在隨
矽氟鍵和矽氧鍵比例(Si-F/Si-O)的上升而降低的氟氧化矽層密度。此外
,由電容(C-V)的量測中,我們發現 氟的攙入將導致較低的介電常數。這
是這篇報告的主要目的和根源。在此報告中,當氟濃 度在4.5原子百分比
時,達到我們最低的介電常數 - 約3.1。此外氟氧化矽層(FxSiOy)的 漏
電及應力現象和氟濃度跟沉積溫度有著有趣的關係。除了追求較低的介電
常數,我們也發現氟氧化矽層的熱穩定性和防水性跟沉積時的溫度,氟濃
度有著密切的關係。而這些性 質在超大型積體電路的金屬間隔介電層上
的應用和世界性研討的主題上也是未來的潮流。在此,我們發現熱穩定性
和防水性將隨沉積溫度的提升而有明顯的改善,然而較高溫度下的沉積也
導致較高介電常數和介面應力。另外,電子迴旋共振化學氣相沉積氧化
層(沒有添 加四氟化碳),甚至在室溫沉積時,也有防水性。在用薄電子
迴旋共振化學氣相沉積氧化層包裹後,低溫沈積氟氧化矽層的吸水性可有
明顯的改善。因此,用高溫沈積來增強防水性的必要性可以避免。


In this work, the inter metal dielectric (IMD) material
using fluorinated silicon oxide (FxSiOy) is fabricated and
studied. These FxSiOy films were deposited in the electron
cyclotron resonance (ECR) chemical vapor deposition system with
SiH4,O2 and CF4 as the reaction gases. Because CF4 is an
indirect fluo rinating source,the fluorinating mechanism will
be simialar to that of theetching of oxide by fluorocarbon
plasma. The growth rate of FxSiOy filmdepends on the
competition between the species deposition and the etching reac
tion. Besides, the process temperature will strongly affect
incorporated fluor ine concentration.
From the investigations by Fourier transform infrared
spectroscopy (FT-IR) and X-ray photoemission spectroscopy
(XPS),we can find that by increasing the CF4/SiH4 flow ratio
during the deposition, the fluorine concentration in thefilm
will increase. The formation of Si-F bonds will change the
oxide properties. Fromthe FTIR spectrum, the shift of
absorbance peak position for Si-O bonds is found to have a
linear positive relation with the absorbance ratio ofSi-F over
Si-O. This reflects in the less dense of oxide network. On the
other hand, from the C-V measurements, we can find that this
incorporation of flu orine results in a lower dielectric
constant. This is the most important purpose and the main spring
of this study. In this work, the lowest dielectric constant is
about 3.1 and the maxmium fluorine con centration is about
4.5 at. %. Besides, the leakage performance of FxSiOy film
shows an interesting correlation with the incorporated fluorine
concentration and the deposition temperature. Except
chasing for the lowest deielectric constant, we also found
that the thermal stability and moisture resistance of FxSiOy
films strongly correlate to the deposition temperature and
fluorine concentration. These are also the critical requirements
for the VLSI circuits IMD applications and main subjects of
studies in the world. Here we found that the thermal stability
and moisture resistance are greatly improved by increasing the
deposition temperature. Unfortunately,the high deposition
temperature will result in a high compressed stress and
dielectric constant. On the other hand, the ECR-oxide (without
CF4 addition), even deposited at room temperature, is shown
to have water resistance. After capped by a thin ECR-oxide, the
moisture absorption of FxSiOy film deposited at low temperature
can be improved. Thus, the necessity of high deposition
temperature for moisture resistance is avoidable.


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