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研究生:楊明達
研究生(外文):Ming-Ta Yang
論文名稱:砷化鋁鎵/砷化銦鎵通道摻雜場效電晶體及其在微波電路之應用
論文名稱(外文):AlGaAs/InGaAs doped-channel FETs for microwave circuit applic- ations
指導教授:詹益仁詹益仁引用關係
指導教授(外文):Yi-Jen Chan
學位類別:博士
校院名稱:國立中央大學
系所名稱:電機工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1995
畢業學年度:84
語文別:英文
論文頁數:147
中文關鍵詞:砷化鋁鎵/砷化銦鎵通道摻雜場效電晶體微波電路
外文關鍵詞:AlGaAs/InGaAsdoped-channelFETmicrowave circuit
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利用砷化鋁鎵/砷化銦鎵異質結構發展通道摻雜場效電晶體;由於其優越之
電流推動能力與崩潰電壓特性,故廣泛地被探討以作為高速電子元件之應
用。利用霍爾效應,光激螢光量測,低頻雜訊頻譜,以及元件直流與高頻特
性探討,求得各種不同應力層結構之通道最佳銦組成;同時考慮磊晶層之
熱穩定性。經由比較DCFET與HEMT間之可靠度顯示,DCFET由於其較平坦之
通道電場分佈可以有效地抑制碰撞游離發生之機率,故可以表現出較可靠
之特性份。此外,利用metamorphic結構我們完成高性能,高可靠度之砷化
銦鋁/砷化銦鎵元件之研製首先將對本系統作一番簡介,繼而詳述各個副
系統。最後以台灣積體完成電路佈局圖。且數位部份全以電通所之佈局元
件庫自動合成。整個晶片面積約佔十二點八平方毫米。經由模擬,類比電
路約有三十八毫瓦之功率消耗。
This thesis will explore mixed analog-digital circuit design
techniques for a 1Mbps IR receiver chip. The VLSI circuits of
the wireless 1Mbps IR receiver which is composed of a
transmitter(TX) , a digital automatic gain control (DAGC), a
timing recovery (TR) , and a data regenerator (DR) will be
investigated, simulated and laid out by using TSMC 5V SPDM 0.8u
CMOS technology. The die size is 0.8mm x 1.6mm and is packaged
in an 28 LD S/B type with 310mil x 310mil. The amplitude
variation of this DAGC analog output is 3mV to 30mV. This DAGC
has a dynamic range of 36 dB and the flat band range is about
20MHz. And the power consumption of the DVGA is 38mW. The TR
has 28 KHz lock-in range and 250KHz capture range with 1MHz
central frequency and 10 degree phase jitter.
COVER
ABSTRACT
TABLE CAPTIONS
FIGURE CAPTIONS
TABLE OF CONTENTS
Chapter 1 INTRODUCTION
1.1 Overview of High Speed Devices
1.2 Objective and Scope of Present Work
Chapter 2 AlojGaAs/InGai., (CKxO.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS
2.1 Introduction
2.2 Characteristics of Pseudomorphic AloGaojAs/InGai.As (0-x-0.25) Doped-channel Structures
2.2.1 Layer Structures
2.2.2 Characteristics of Layer Structures
2.2.3 Low Frequency Noise Spectra
2.3 DC and Microwave Characteristics of Ain 3Gan 7As/InxGai.xAs ((KxO.25) Doped-channel FEFs
2.3.1 Device Fabrication
2.3.2 Device Characterics
2.4 Uniformity
2.4.1 Material Growth and Sample Preparation
2.4.2 Characteristics of Ain sGan yAs/Inn i5Gao g5As Doped-channel Structures
2.4.3 3" AlQjGaojAs/Ino.15Gao g5As Doped-channel FETs
2.4.4 Short Channel Effects
2.5 Conclusions
Chapter 3 IMPROVEMENT OF DEVICE RELIABILITY BY DOPED-CHANNEL DESIGN
3.1 Introduction
3.2 The Reduction of the Impact Ionization Process by AlGaAs/Ino GaogAs Fieterostructure Doped-channel Design
3.2.1 Anomalous I-V Characteristics (kink) of AlGaAs/InoGaogAs DCFETs
3.2.2 Impact lonization in Strained AlojGaojAs/LixGai.xAs DCFETs
3.2.3 Reliability Evaluation
3.3 Novel InoAloiAs/InojGaojAs DCFETs Fabricated on GaAs Substrates
3.3.1 Material Growth and Characteristics
3.3.2 Device Fabrication and Characteristics
3.3.3 Reliability Test
3.4 Conclusions
Chapter 4 DEVICE LINEARITY IMPROVEMENT BY AlGaAs/InGaAs DOPED-CHANNEL DESIGN AND ITS APPLICATION TO CIRCUIT DESIGN
4.1 Introduction
4.2 Device Linearity Improvement
4.2.1 Pseudomorphic AI() jGao jAs/Ino Gao gAs HFET
4.2.2 Pseudomorphic HFETs Characteristics
4.2.3 Bias-dependent Small-signal Equivalent Circuit Elements
4.3 A Non-linear Model for AlGaAs/InGaAs Doped-channel FETs Using in the Design of Oscillators
4.3.1 Large-signal Equivalent Circuit
4.3.2 Oscillator Design and Analysis
4.4 Conclusions
Chapter 5 APPLICATION OF AlGaAs/InGaAs DOPED-CHANNEL FETs ON MMICs
5.1 Introduction
5.2 Monolithic Circuit Elements
5.2.l Pseudomo AlGaAs/Ino GaogAs DCFETs
5.2.2 PassiveComponents
5.2.3 AlGaAs/InoGaogAs DCFETs Amplifier Design
5.2.4 Amplifier Fabrication
5.2.5 Results and Discussions
5.3 Conclusions
Chapter6 CONCLUSIONS AND SUGGESTIONS FOR FUTURE STUDIES
6.1 Conclusions
6.2 Suggestions for Studies
REFERENCES
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