|
This thesis presents a closed a closed-form analytical ve-
locity-overshoot model for deep-submicron bipolar devices con-
sidering energy transport by including the energy flux gradient
has been reported. As confirmed published results using fully
numerical analysis, the analytical velocity-overshoot model
pre- dicts that in a bipolar device with a very short base
width, its peak electron velocity, which can exceed the
saturated velocity, occurs at a location ahead of its peak
electron temperature loc- ation. In addition, a 2D simulation
study of the DC and tran- sient behavior of a SiGe-base HBT
with an extended Ge peofile extended into the n-epi region has
been reported. With an ex- -tended Ge profile, the unity gain
frequency, which suffers less from high injection degradation,
is insensitive to the Ge con- -tent. Besides, transient circuit
analysis shows that the speed behavior of an ECL buffer is less
influenced by high injection effects.
|