臺灣博碩士論文加值系統

矽晶圓在經鑽石輪磨及機化學拋光後會有加工損傷層產生，這損傷層包含：表面脆性破裂；一層組成為SiOx之變質層；表面下之差排與微裂縫等缺陷。本文分析之試片為經#1200，#2000，#4000，#6000及#8000五種不同號數輪磨之矽晶圓，及#4000號輪磨加以機化學拋光之#4000P試片。使用傅立葉轉換紅外光譜儀分析變質層之結果：#1200試片介於4∼5nm之間；#2000，#4000，#4000P及#6000四組試片介於5∼15nm之間；#8000試片小於5nm，使用歐傑電子能譜儀分析此六組試片變質層之結果：氧濃度由表面遞減分佈至矽基底；#1200及#8000試片外，其餘皆有碳植入現象，橢圓分析儀分析#4000P試片其變質層厚度為5.6nm；組成為Si0x(x<2)，由穿透式電子顯微鏡分析#4000及#4000P試片分析可驗証上述之分析結果。由掃瞄式電子顯微鏡、原子力顯微鏡及穿透式電子顯微鏡觀察分析試片之表面及表面下之結果：#1200試片表面有脆性破裂產生，#2000，#4000，#6000及#8000四組試片表面有脆性破裂產生，同時表面下有差排，#4000P試片表面已無加工脆裂及痕跡。由各儀器分析出之結果，可知此六項分析儀器可利用於矽晶圓製程中輪磨及機化學拋光之參數設定。

This study uses cross-section transmission electron microscope (XTEM), scanning electron microscope (SEM), Fourier-transform infrared spectrometry (FTIR), Auger electron spectroscopy (AES), ellipsometry and atomic force microscope (AFM) to characterize the surface layer of Si wafers after diamond grounded and chemornechanical polished (CMP). The wafers are designed as #1200, #2000, #4000, #6000, and #8000, respectively, which are electrolytic in-process dressed (ELIDed) with diamond under various grain size, whereas #4000P which is first ground and then CMP. An armorphous damaged layer is always formed on the surface and contains a thin layer of oxide (SiOx, x≦2) and underneath coexists a high density defects. The SiOx thicknesses determined by FTIR are: 5~15 nm for #2000, #4000, #4000P, and #6000, 4~5 nm for #1200, and less then 4 nm for #8000 sample. The SiOx thickness of #4000P is 5.5 nm determined by AES and 5.6 nm determined by ellipsometry. The SiOx thicknesses of #4000 and #4000P specimens are further confirmed by XTEM and consistent with the FTIR, AES, and ellipsometry analyses. The defects formed on the surface characterized by SEM, AFM, and XTEM are: #1200 specimen only has crack on the surface, #2000, #4000, #6000, and #8000 specimens have both crack and dislocation on the surface, #4000P specimen has clean surface with no cracks and dislocations.