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研究生:廖金昌
研究生(外文):Liao, C. C.
論文名稱:在(311)A砷化鎵上成長量子井紅外線光偵測器和砷化鋁金因/砷化金因/砷化鋁金因高電子遷移率電晶體的研究
論文名稱(外文):Investigation of Quantum Well Infrared Photodetetors on (311)A GaAs and In0.52Al0.48As/InAs/InxAl1-xAs Pseudomorphic HEMT on InP
指導教授:謝煚家蔡中蔡中引用關係
指導教授(外文):Hsieh, I. J.Tsai, C.
學位類別:碩士
校院名稱:中華大學
系所名稱:電機工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1997
畢業學年度:85
語文別:英文
論文頁數:44
中文關鍵詞:砷化鎵紅外線光
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本論文研究在(311)A砷化鎵(GaAs)上成長砷化鋁鎵/砷化鎵(AlGaAs/GaAs)與砷化鋁鎵/砷化銦鎵(AlGaAs/InGaAs)兩種矽摻雜的p型量子井紅外線光偵測器(QWIPs)和磷化銦上的砷化鋁銦/砷化銦/砷化鋁銦高電子位移率電晶體。
矽摻雜的砷化鋁鎵/砷化鎵(AlGaAs/GaAs)p-QWIP在40K到12OK的測量溫度顯現對稱的暗電流─電壓特性。應力的p型砷化鋁鎵/砷化銦鎵(AlGaAs/InGaAs)QWIP顯現輕微地不對稱但明顯地比鈹摻雜有更小的非對稱特性。在暗電流─電壓輕微的不對稱和響應光譜大的藍位移或許起因於觀測TEM的厚度調整以及光激光(PL)尖峰能量的紅位移,從(311)A砷化鋁鎵/砷化銦鎵(AlGaAs/InGaAs)多重量子井的光激光(PL)尖峰能量對(100)並排成長有7和22meV的紅位移。
InAs通道HEMT的直流和微波行為已有文獻報告過了,高載子濃度2.7x1012cm-2,可測量到室溫電子遷移率高達20,200cm2/V-s,閘長度1.1μm的HEMT測量到的外部轉導是714ms/mm以及單位-電流-增益截止頻率為50GHz。要達到較高的Hall位移率和元件效率與緩衝層InxAl1-xAs的設計有強烈的關連,經由改變晶格常數由晶格-匹配的In0.52Al0.48As到In0.75Al0.24As。和步階的InxAl1-xAs及均勻的In0.75Al0.24As緩衝層比較,1μm閘長度的HEMT測量到的外部轉導是714ms/mm以及單位-電流-增益截止頻率為50GHz。多重的In0.52Al0.48As/InAs單層重疊晶格緩衝層有最佳的效率。
We have studied two Si-doped p-type quantum well infrared photodetectors (QWIPs) using AlGaAs/GaAs and AlGaAs/InGaAs grown on (311)A GaAs and In0.52Al0.48As/InAs/InxAl1-xAs Pseudomorphic HEMT on InP.
The Si-doped AlGaAs/GaAs p-QWIP exhibits a symmetrical dark I-V characteristic at all the measured temperatures from 40K to 120K. The strained p-type AlGaAs/InGaAs QWIP exhibits a slightly asymmetrical dark I-V characteristic, but is markedly less asymmetrical than that doped with beryllium. The slight asymmetry in dark I-V characteristic and the large blue-shift in responsivity spectra may be due to the thickness modulation observed from TEM and the red-shift of PL peak energy, where PL peak energies from (311)A AlGaAs/InGaAs multiple quantum wells are red-shifts of 7 and 22 meV to the side-by-side grown (100).
The dc and microwave performance of a InAs channel HEMT is reported. Room-temperature electron mobility as high as 20,200 cm2/V-s is measured, with a high carrier concentration of 2.7x1012cm-2.DC extrinsic transconductance of 714mS/mm is measured and a unity-current-gain cut-off frequency of 50GHz is obtained for a 1.1mm gate length HEMT. The success of achieving superior Hall mobility and device performance is strongly dependent on the InxAl1-xAs buffer layer design that changes the lattice constant from lattice-matched In0.52Al0.48As to In0.75Al0.25As. The multiple In0.52Al0.48As/InAs monolayer superlattices buffer achieves the best performance as compared to the step-graded InxAl1-xAs and the uniform In0.75Al0.25As buffer.

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