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研究生:謝思義
論文名稱:磷化銦橫向磊晶層之研究
論文名稱(外文):Study on InP Epitaxial Layers by Epitaxial Lateral Overgrowth
指導教授:廖森茂
學位類別:碩士
校院名稱:中原大學
系所名稱:電子工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1997
畢業學年度:85
語文別:中文
論文頁數:65
中文關鍵詞:磷化銦液相磊晶橫向磊晶
外文關鍵詞:InPLiquid phase Epitaxy(LPE)Epitaxial Lateral Overgrowth(ELO)
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  本論文最主要的目的在於橫向磊晶技術之確定。若能確定此技術,則可為未來半導體材料提供更多彈性的組合,更大的應用空間。
  在此,利用液相磊晶成長法並配合橫向磊晶技術,先行於同質的基板上,探討其成長的機制,作為日後應用於異質磊晶之基礎。材料相關的特性由量測結果獲得。
  實驗過程中,顯示了影響磷化銦磊晶層成長的重要效應。罩幕圖案的形式與設計,說明了橫向磊晶層寬度與品質的密切關連。磷化銦磊晶層其表面型態由金相顯微鏡、掃瞄式電子顯微鏡和在不同條件下得到毫無特性的鏡面表面。同時改變成長溫度、降溫速率及嘗試摻入雜質來得到其最佳的磊晶品質及成長條件。
  磊晶層的結晶性由X-ray繞射獲得。溫度、降溫速率及雜質摻雜量的多寡,影響X-ray繞射譜的強度和半高波寬,表示品質和成長條件的相關性。
  光特性則由光激螢光量測顯示出與X-ray繞射具有類似的趨向。
  量測結果顯示出,較低的成長溫度、較小的降溫速率和少量的雜質摻雜,可以得到好的橫向磊晶層品質。


  The major purpose of this study identified Epitaxial Lateral Overgrowth(ELO) technique. It offers the flexible approach to larger applied fields for semiconductor material in the future if we can maturely confirm this technique.
  In this study, we use the LPE growth method and combine the ELO technique that the homoepitaxial ELO of InP over lnP substrates was obtained. In order to comprehend the growth mechanisms in process. The related characterizations of the lnP ELO layer were measured and analyzed.
  Experimental details revealed important effects on lnP ELO layer growth. The mask patterns' shape and design strongly explain the dependence of the ELO layer on width and quality. Surface morphology of lnP ELO layers studied by Nomarski differential interference contrast microscope (N-DICM) and scanning electron microscopy (SEM) shows various morphologies result due to different growth conditions as well as featureless mirror-like surface. That indicated, the growth temperature, cooling rate and doping impurity to dominate epitaxial layers quality and characterization.
  Crystallinity was characterized by x-ray diffraction (XRD). Growth temperature, cooling rate and impurity doping affect the intensity and full width at half-maximum (FWHM) of x-ray data that implied the quality dependence on growth conditions.
  Optical property was measured by photoluminescence (PL). It showed the results of similar tendency to the x-ray measurement.
  The results confirmed that lower growth temperature, lower cooling rate and smaller dopant are appropriate to obtained high quality epitaxial layers.

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