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研究生:秦啟元
研究生(外文):Chin, C.Y.
論文名稱:活性離子蝕刻於磷化銦鎵/砷化銦鎵/磷化銦鎵假晶高電子移動率電晶體之研究與應用
論文名稱(外文):Study and Application of Reactive Ion Etching on Pseudomorphic InGaP/InGaAs/InGaP HEMTs
指導教授:蘇炎坤蘇炎坤引用關係張守進張守進引用關係
指導教授(外文):Su, Y.K.Chang, S.J.
學位類別:碩士
校院名稱:國立成功大學
系所名稱:電機工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1997
畢業學年度:85
語文別:英文
論文頁數:38
中文關鍵詞:活性離子電晶體
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  本論文乃是探討以三氯化硼/氬氣為主的高蝕刻選擇率之活性離子蝕刻於磷化銦鎵/砷化銦鎵/磷化銦鎵假晶高電子移動電晶體閘極製程的應用情形及其研究。在研究過程中,我們有系統地改變三氯化硼及氬氣的氣體比例,並探討其在磷化銦鎵與砷化鎵兩種材料之蝕刻選擇性情形。此外,也應用原子力顯微技術(AFM)、光調制光譜學(PR)與拉曼散射(RS)來決定因三氯化硼/氬氣離子轟炸所造成的表面粗糙程度。由上所測得結果,我們發現當乾蝕刻條件為三氯化硼流量6sccm、氬氣流量4sccm及100瓦操作功率時,可得到表面有較少量之缺陷產生。因此,便以此最佳乾蝕刻條件製成電晶體元件。而以此條件製成元件之直流及高頻特性皆比濕蝕刻製成之元件來的優越。此外,0.8微米閘極長度之電晶體元件,其截止頻率fT可達20GHz,而最大震盪頻率fmax則可達54GHz。


  A highly selective reactive ion etching (RIE) process based on BCl3/Ar plasma was applied as a gate-recess technique in fabrication of InGaP/InGaAs/InGaP PHEMT. In our study, we systematically changed the mixing ratio between BCl3 and Ar gases and investigated its influence on etching selectivity between InGaP and GaAs materials. Atomic force microscopy (AFM), photoreflectance (PR), and Raman scattering (RS) were applied to determine the surface roughness of InGaP/InGaAs/InGaP HEMT caused from the BCl3/Ar plasma bombardment. It was found that sample dry etched with a 6 seem BCl3 flow rate, a 4 seem Ar flow rate, and a 100 W RF power has the smallest amount of damage. The results of RS and PR spectra were consistent with those evaluated by AFM. By using the optimum condition for the later-on gate recess, we have successfully fabricated the InGaP/InGaAs/InGaP PHEMT. The DC and microwave characteristics of device fabricated by this optimum condition were superior to the wet etched device and the other dry etched device. Microwave measurements of this dry etched device with 0.8 μm gate length revealed cut off frequency fT of 20 GHz and fmax of 54 GHz.

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