臺灣博碩士論文加值系統

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Chinese Abstract
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Acknowledgment
Contents
Tables Caption
Chapter 1 Introduction
1-1. Motivation of This Study
1-2. Materials for Low-K intermetal Dielectric Applications
1-3. The Process Tool Used in This Study
1-4. Organization of This Study
Chapter 2 Characteristics of Low Dielectric Constant FxSiOy Fabricated by ECR-CVD System with Si, O2 and C as Reaction Gases
2-1. Reaction Gases
2-2. Experimental Procedure
2-3. Results and Discussion
2-4. Summary
Chapter 3 Influences of Deposition Temperature on Thermal Stability and Moisture Resistance of Chemical Vapor Deposited FxSiOy by Using Indirect Fluorinating Precursor
3.1 Introduction
3.2 Experimental Procedure
3.3 Results and Discussion
3.4 Summary
Chapter 4 Effect of Adding Ar on Thermal Stability of Chemical Vapor Deposited FxSiOy Using an Indirect Fluorinating Precursor
4.1 Introduction
4.2 Experimental Procedure
4.3 Results and Discussion
4.4 Summary
Chapter 5 The Leakage Performance and Breakdown Mechanism of Silicon-Rich Oxide and Fluorinated Oxide Prepared by ECR-CVD System
5.1 Introduction
5.2 Experimental Procedure
5.3 Results and Discussion
5.4 Summary
Chapter 6 Reduction of Selectivity Loss Probability during Chemical Vapor Deposition of Tungstn Using Fluorinated Oxide and Removing Silanol Units on Dielectric Surface
6.1 Introduction
6.2 Experimental Procedure
6.3 Results and Discussion
6.4 Summary
Chapter 7 Conclusion of This Study and Suggestions for Future Work
7.1 Conclusion of This Study
7.2 Suggestions for Future Work