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Temperature dependent photolummescence and Raman spectroscopy were used to analyze the properties of ZnSe doped glass thin films. From the temperature dependent Raman spectra, the phonon lifetime and spectra width decrease at high temperature because of the decay of optical phonons into low energy phonons. From the temperature dependent photolum-inescence, we observed the peaks shift to the lower energy and decrease in intensity with increasing temperature related to the transition of free electron-hole and free electron-acceptor. The former is due to change of the energy gaps of semiconductors with temperature, the latter is due to the thermal quenching process that characterizes by the activation energy induces the carrier transition from the potential minimum of the free state to the nonradiative potential.
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