COVER
CONTENTS
Abstract (Chinese)
Abstract (English)
Acknowledgment(Chinese)
Content
Table Captions
Figure Captions
Chapter 1 Introduction
1.1 General Background
1.2 Materials for Multilevel Interconnect Technologies
1.3 Selective CVD-W
1.4 Organization of the Thesis
References
Chapter 2 Preclean of Contact Hole for Tungsten Deposition
2.1 Introduction
2.2 Experimental Details
2.3 Results
2.4 Discussion
2.5 Summary
References
Chapter 3 Selective CVD Tungsten on Submicron Contact Hole
3.1 Introduction
3.2 Experimental Details
3.3 Results and Discussion
3.4 Summary
References
Chapter 4 Thermal Stability of W-Contacted Junction Diodes
4.1 Introduction
4.2 Experimental Details
4.3 Results and Discussion
4.4 Summary
References
Chapter 5 Improvement on Thermal Stability of W-contacted Junction Diode using in-situPost CVD-W Treatment
5.1 Introduction
5.2 Experimental Details
5.3 Results and Discussion
5.4 Summary
References
Chapter 6 Preclean of Al Via for Tungsten Deposition
6.1 Introduction
6.2 Experimental Details
6.3 Results and Discussion
6.4 Summary
References
Chapter 7 Selective Tungsten CVD on Submicron Al Via
7.1 Introduction
7.2 Experimental Details
7.3 Results and Discussion
7.4 Summary
References
Chapter 8 A New Tungsten Gate MOS using CVD Process
8.1 Introduction
8.2 Experimental Details
8.3 Results and Discussion
8.4 Summary
References
Chapter 9 Conclusions and Suggestions for Future Work
9.1 Conclusion
9.2 Suggestions for Future Work
Vita
Publication List
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