臺灣博碩士論文加值系統

高性能砷化銦鎵/磷化銦檢光二極體在長波長光纖通信及量測上是一
關鍵性元組件.本論文針對磊晶材料特性分析,元件的製作,量測,計算,及
分析做深入的探討.利用液相磊晶(LPE)技術研製摻鉺離子砷化銦鎵檢光二
極體,我們先對摻鉺離子砷化銦鎵磊晶層的成長及特性進行分析,然後根據
其最佳條件來製作元件,並經由電特性與光特性及動態特性等測試以驗證
元件特性.至於在平面結構砷化銦鎵檢光二極體,我們提出一個分佈式阻抗
模型來對檢光二極體阻抗做計算,並將所得到的相關參數代到電阻-電感-
電容電路模型(R-L-C Circuit Modeling)計算頻率響應,並和實際量測之
頻率響應做比較.同時我們也利用有機金屬化學氣相磊晶(MOCVD)技術所研
製出之平面元件進行可靠度方面的研究.在高速率檢光二極體方面,一製程
簡單且良率又高又可在磷化銦半絕緣基板上製作出低電容平面檢光二極體
已被證實,其3-dB頻寬超過14 GHz. 另外,我們成功的研製出1x12檢光
二極體陣列,這些陣列元件在暗電流及光電響應度方面具有很好的性能及
高均勻度.最後,我們也研製出平面結構砷化銦鎵/磷化銦累增崩潰檢光二
極體(APD),並量測其元件特性,其增益頻寬乘積(GBW)可達10 GHz.

High-performance InGaAs/InP photodiodes are vital components
for long-wavele-ngth optical fiber communications and
measurements. This dissertation exploresin depth the material
characterization, device fabrication, measurement, calc-ulation,
and analysis. For the Er-doped InGaAs PIN photodiodes grown by
liquidphase epitaxial(LPE), the growth and characterization of
Er-doped InGaAs laye-rs, and fabrication and performance of Er-
doped PIN photodiodes have been inv-estigated. For the planar
devices, we have proposed a distributed impedance model and
diode impedance calculation, and RLC modeling on frequency
response.We also present the preliminary efforts on reliability
of the fabricated grow-n by metal-organic chemical vapor
deposition(MOCVD) devices. In respect of thehigh speed PIN
photodiode, we have demonstrated a simple, high yield planar -
process for fabricating low-capacitance InGaAs PIN diodes on
semi-insulating InP substrate withbandwidth exceeding 14 GHz.
In addition, we have successfu-lly fabricated the uniform and
high performance of monolithically integrated 1 x 12 array of
planar InGaAs PIN photodiodes. These photodiode arrays have hi-
ghly uniform characteristics and good performance in dark
currents and photor-esponsivities. Lastly, the device of planar
InGaAs/InP avalanche photodiodes have been fabricated and
characterized. The gain-bandwidth products of 10 GHz were
obtained.

封面
中文摘要
誌謝
目錄
第一章 序論
第二章 以液相磊晶技術研製摻鉺離子砷化銦鎵PIN檢光二極體
第三章 以有機金屬化學氣相磊晶技術研製高性能平面砷化銦鎵PIN檢光二極體
第四章 高均勻度1X12砷化銦鎵檢光二極體陳列
第五章 高速率砷化銦鎵PIN檢光二極體之研製
第六章 平面異質結構砷化銦鎵磷化銦累增崩潰檢光二極體
第七章 結論及未來工作
COVER
Abstract
CONTENTS
Table Captions
Figure Captions
Chapter 1. Introduction
Chapter 2. Er-Doped Ino.53Gao.47As PIN Photodiodes Grown by LPE
2.1 Introduction
2.2 LPE Growth and Characterization ofUndoped and Er-Doped In0.53Ga0.47As Layers
2.2.1 LPE Growth ofUndoped and Er-Doped In0.53Ga0.47As Layers
2.2.2 Characterization of Undoped and Er-Doped In0.53Ga0.47Ga0.47As Layers
2.3 Fabrication and Performance of Mesa Er-Doped InGaAs PIN Photodiodes
2.3.1 Device Structure and Fabrication
2.3.2 Current-Voltage and Capacitance-Voltage Characteristics
2.3.3 Photoresponsivity and Quantum Efficiency
2.3.4 Noise Spectra
2.3.5 Pulse Response
2.3.6 Eye Patterns
2.4 Summary
Chapter 3. High-Performance Planar InGaAs PIN Photodiodes Grown by MOCVD
3.1 Introduction
3.2 Planar PIN Photodiodes Grown by MOCVD
3.2.1 Device Structure and Fabrication Process
3.2.2 Device Performance
3.3 Linearity
3.4 Impedance Calculation and Frequency Response Analysis
3.4.1 TLM Experiments and Diode Impedance Calculation
3.4.1.1 TLM Experiments
3.4.1.2 Distributed Impedance Model and Diode Impedance Calculation /
3.4.2 RLC Modeling on Frequency Response
3.5 Reliability : Aging Test
3.6 Summary
Chapter 4. Highly Uniform Monolithic 1 X 12 Array of InGaAs Photodiodes
4.1Introduction
4.2Array Structure and Fabrication Process
4.3Experimental Results and Discussions
4.3.1 Current-Voltage Characteristics
4.3.2 Capacitance-Voltage and Crosstalk Capacitance
4.3.3 Photoresponsivity and Quantum Efficiency
4.3.4 Speed of Response
4.3.5 Noise Spectra and Noise Current
4.3.6 Device Qualification
4.4 Summary
Chapter 5.High Speed InGaAs PIN Photodiodes on Semi-Insulating InP Substrate
5.1 Introduction
5.2 Device Fabrication
5.3 Device Characteristics and Discussions
5.3.1 Dark Current, Capacitance and Responsivity
5.3.2 The Measured and Calculated 3-dB Bandwidth
5.4 Summary
Chapter 6. Planar Heterostructure InGaAs/InP Avalanche Photodiodes
6.1 Introduction
6.2 Device Structure and Electric Field Calculation
6.3 Device Fabrication and Diode Characteristics
6.4 Summary
Chapter 7. Conclusions and Future Work
7.1 Conclusions
7.2 Future Work
References
Publication List