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The Lead-Zirconate-Titanate (Pb(Zr52Ti48)O3, PZT) thin
films, 0.5um, have been deposited on Pt/Si substrate at room
temperature by RF planar magnetron sputtering technique.
The annealing temperature of the PZT thin film are 650(degree)C
to 750(degree)C and perovskite structure is obtained. By the X-
ray diffraction(XRD) analysis, the FWHM of (110) plane is
0.23(degree) and (110) orientation a is 0.12. The values of
the remanent polarization Pr and thecoercive field Ec of the PZT
thin film are 100nCcm^(-2) and 0.6KVcm^(-1) ,respectively,
at 60Hz. The measured pyroelectric coefficient in 0.5um thin
films is 3.12*10^(-4)C/m^(2)K at 50(degree)C. Their dielectric
constant and theloss tangent are about 494 and 0.072,
respectively, at 1KHz. The surface structure of PZT thin
film was examined by scanning electron microscopy(SEM) and the
grain size in the rang of 0.08-0.14um.
In this paper the integrated pyroelectric infrared sensors have
been made by combining a PZT thin film with an Si JFET. A JFET
is used to read out the pyroelectrically generated signal. The
relevant sensor parameters voltage sensitivity and specific
detectivity are measured within a modulation frequencyrange from
0.2Hz to 10 Hz. With the 500um thick silicon substrate, the
voltage sensitivity is RV = 191V/W, the maximum specific
detectivity is D* = 2*10^(7) cmHz^(1/2)/W, at a modulation
frequency of 1Hz.
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