摘 要本論文乃是針對非晶矽氫 (氘)在光照下之光導電度作比較。首
先是有關非晶矽氘之製作，以氘氣電漿處理法將氘原子加入已經過 550oC
退火之非晶矽中。經過不同條件的測試後，找出一最佳的氘氣電漿處理條
件，即生長室壓力為 6 Torr，且加一金屬網在陰陽極之間，並製作出良
好的非晶矽氘薄膜以作為後續實驗之樣本。其次是非晶矽氫 (氘)之光照
穩定度之實驗，經過五百小時以上之量測後發現非晶矽氘遠比非晶矽氫穩
定，論文中也提出一種合理的模型來解釋此現象。在強光照射下所產生之
電子及電洞，被矽-氘鍵附近之缺陷 ( dangling bonds )補捉而以非輻射
方式釋放出能量，然後再傳遞給矽氘鍵產生各式各樣之振動。在非晶矽氘
中矽-氘鍵之擺動頻率 ( wagging mode, 510 cm-1 )與矽-矽鍵聲子頻率(
phonon mode, 495 cm-1 )相近，兩種振動模式有較高的能量耦和效率，
能量容易由局限的在矽-氘鍵之振動傳遞給延展的矽-矽鍵聲子振動模式而
四散到整個樣本中，能量累積的速率較慢進而使得斷鍵發生較慢，缺陷產
生速率降低，因此在相同的光照強度下非晶矽氘材料擁有較高的光照穩定
度。

AbstractLight-induced photoconductivity degradations in
intrinsic hydrogenated (a-Si:H) and deuterated amorphous silicon
(a-Si:D) alloy were studied. In this thesis, the a-Si:D film is
prepared by the deuterium plasma treatment of 550oC thermally
annealed a-Si:H film which all hydrogen atoms have been driven
out. The chamber pressure was 6 torr with a stainless mesh
installed between power and ground electrodes. The light-induced
photoconductivity degradation in intrinsic a-Si:H and plasma
treated a-Si:H and a-Si:D were measured. It is found that
deuterated a-Si:D turns out to be more stable than a-Si:H under
the same light exposure. A possible mechanism is proposed to
explain this phenomenon. It is attributed to the highly
efficient coupling between localized Si-D wagging modes (~510
cm-1) and extended Si-Si lattice vibration modes (~495 cm-1).
The energy released from electron or hole capture at silicon
dangling bonds causes localized vibrations of nearby Si-D bonds.
The energy dissipates quickly to the background lattice and a
higher recombination rate at local sites is needed in deuterated
a-Si than in hydrogenated amorphous silicon to accumulate enough
energy to break the nearby weak bonds.