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研究生:林佑
研究生(外文):Lin, Yo-Sheng
論文名稱:磷化銦鎵/砷化銦鎵通道攙雜場效電晶體及其在單晶微波積體電路之應用
論文名稱(外文):Ga0.51In0.49P/InxGa1-xAs Doped-Channel FETs and their Applications on Monolithic Microwave Integrated Circuits
指導教授:呂 學 士---
指導教授(外文):Lu, Shey-Shi
學位類別:碩士
校院名稱:國立臺灣大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
畢業學年度:85
語文別:英文
論文頁數:160
中文關鍵詞:磷化銦鎵砷化銦鎵通道攙雜場效電晶體單晶微波積體電路
外文關鍵詞:GaInPInGaAsDoped-ChannelField-Effect-TransistorMMIC
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本論文的前半段主要研究以氣態源分子束磊晶機 (GSMBE) 所成長的 "磷
化銦鎵/砷化銦鎵 (Ga0.51In0.49P/InxGa1-xAs)" 材料系統的異質結構來
製作各種高操作速度、高輸出功率的場效電晶體的可行性。我們共設計及
製作了四種高頻、高功率場效電晶體, 包括(1)以磷化銦鎵為通道, (2)以
磷化銦鎵為絕緣層、砷化鎵為通道並採用閘極空橋 (air-bridge gate)
結構, (3)以磷化銦鎵為絕緣層、砷化銦鎵為通道及 (4)以磷化銦鎵為絕
緣層、砷化銦鎵為通道並採用三階凹槽蝕刻 (triple-recessed) 閘極結
構。就材料、元件結構及磊晶機的角度來說, 這四種高頻、高功率場效電
晶體
本論文的後半段是發展單晶微波積體電路 (MMIC) 所需的技術並真正製作
出單晶微波積體電路。首先, 我們建立元件的小訊號及大訊號模型、發展
空橋技術、建立被動元件的參數資料庫。其次, 為了檢驗元件的均勻度
(uniformity) 我們設計及製作了一差動放大器, 量測結果顯示輸入偏移
電壓小於8 mV, 3dB截止頻率為2.5 GHz的極佳結果。 最後, 我們設計及
製作了一個單級的S頻帶的單晶微波積體電路放大器, 量測結果顯示對於
閘極尺寸1×200 mm2的主動元件, 增益達9.2 dB, 輸入及輸出VSWR分別
為 1.4及1.35。 另外我們也利用漢威的製程製作了震盪頻率 5 GHz輸出
功率 2.
In this thesis, the first Ga0.51In0.49P channel MESFET''s grown
by GSMBE were designed and implemented. Due to the
substantially higher breakdown field and superior transport
properties of Ga0.51In0.49P to GaAs, Ga0.51In0.49P channel
MESFET''s exhibited better dc and microwave performance than
those of GaAs channel MESFET''s. In addition, the first Ga0.51
In0.49P airbridge gate MISFET''s were fabricated successfully
and easily by simple wet chemical etching technique because of
the high etching selectivity betwe
In order to further improve devices performance, Ga0.51In0.49P/
InxGa1-xAs (0 * x * 0.22) doped-channel FET*s (DCFET*s)
with different indium contents were investigated in terms of dc
and microwave performance. The experimental results suggest
that the optimized content of an 150- thick InxGa1-xAs channel
is between x=0.15 and x=0.20. A degradation of device
performance was observed for larger indium content ( x = 0.22
), which is associated with strain relaxation in this highly
strain channel. Moreov
After well characterize of the above devices, we choose Ga0.51
In0.49P/InxGa1-xAs DCFETs as active devices for developing
MMICs. By fitting the S-parameters of the small signal
equivalent circuit to the measured S-parameters, the small
signal parameters were extracted. Curtice large signal model
was established based on the DC measurements and the above
small signal parameters. A small mismatch (input offset voltage
8 mV) and a wide bandwidth (2.5 GHz) were achieved for our
fabricated Ga0.51In0.49P/GaAs diff
With photolithographic and airbridge techniques, we fabricated
spiral inductors with values ranging from 0.81 nH to 10.47 nH
and MIM capacitors with mean specific capacitance 159.07 pF/
mm2. Based on the established database of both active and
passive elements, we designed and fabricated an S band
amplifier. We measured a gain of 9.2 dB associated an input
VSWR of 1.4 and output VSWR of 1.35 at the center frequency 2.4
GHz. In addition, a MMIC oscillator using Hexawave*s
fabrication process was designed and
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