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研究生(外文):Lin, Ray-Ming
論文名稱(外文):The Studies on Molecular Beam Epitaxial Growth and Opto-Electrical Characteristics of InAs Infrared Devices
指導教授:李 嗣 涔---
指導教授(外文):Si-Chen Lee
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層表面的不平整度。並利用原子力顯微鏡 (AFM),掃描在各不同成長條件下,其磊晶層表
利地研製成功能夠在室溫下操作的砷化銦光導體偵測器與不需要表面披覆層的砷化銦 p-i
-n 光偵測器,並分別得到相當不錯的元件特性。在室溫下,這兩種元件所量測到的偵測
度 D* 分別為 2.1×108 與1.2×1010 cm-Hz1/2/W。就我們所知這分別是室溫紅外線光導
體與偵測器最佳的數據之一。我們發現此3, 4 或5個原子層壘晶格結構的砷化銦量子點。
從電子繞射晶格影像的分析,其倆磊晶材料間相對的應力釋放程度分別為 17%, 22% 與 3
9%。接著藉由光激放光的實驗量測,在 5 K 下也分別量測到 3, 4 和 5 ML的砷化銦量子
點光激放光頻譜,其峰值能量分別是 1.162 , 1.140 與 1.074 eV,且其各半高寬皆小於
50 meV。 也藉由光熱偏折光譜儀系統的量測,得到 3, 4 或 5 個原子層(ML)的砷化銦
量子點。其在室溫的吸收頻譜的峰值能量分別為 1.18, 1.10 與 1.05 eV,指出光熱偏折
術,也量測到 5 個 原子層 (ML)砷化銦量子點的表面影像。可以明顯地
看出此 5 ML 砷化銦的量子點,其量子點間的距離,峰與谷底間的高度,
,21.5,3.8,33.0,7.6 與 10.0 nm。

由3, 4 和 5 ML的砷化銦量子點光激放光頻譜的溫度效應,發現其半高寬
在5 ~ 80 K 之間,發現其中 5 ML 砷化銦壘晶格結構,其光激放光頻譜

。另外得到此元件的發光特性,證明此種元件結構有潛力應用於1.5 ~
3.0 mm 間的發光波段。

A novel in situ method to monitor the InAs epilayer surface roughness by using
pyrometer reading is proposed. The variation of pyrometer reading can be rela
ted to the surface morphology of the InAs epilayer deposited on GaAs, and prov
ides an easy way for rapid calibration of growth conditions. The atomic force
microscope is applied to measure the surface roughness which verifies the corr
elation between InAs epilayer morphology and the pyrometer reading. The optima
l InAs growth conditions could be easily determined by the way of the pyromete
r reading, the surface morphology, the double crystal x-ray diffraction rockin
g curve and the cross-sectional transmission electron micrograph. In addition,
InAs p-i-n detectors grown by this way, the passivation treatment is no more
needed. To our knowledge, those are the best specific detectivity for a room t
emperature infrared p-i-n detector and InAs/GaAs photoconductor, respectively.
Then InAs quantum dot superlattice with InAs nominal thickness up to 5 monolay
ers (ML) have been investigated. The resulting relaxation between the two mate
rials are about 17 %, 22 % and 39 %, respectively. Up to 5 ML InAs grown on Ga
As, the peak to valley, the standard deviation, the average radius, the mean h
eight and the peak probability of dot height are 21.5, 3.8, 33.0, 10.0 and 7.6
nm, respectively.At 5 K, the PL peak energies of 3, 4 and 5 ML InAs as the we
ll region grown on GaAs are 1.162, 1.140 and 1.074 eV, respectively, and the c
orresponding FWHM are 43, 45 and 49 meV, respectively. In addition, the obtain
ed bandgap energies for different quantum dots size are also measured by the p
hotothermal deflection spectroscopy at room temperature. Also the FWHM has sho
wn an unusual variation with temperature. It is suggested that the relaxation
of photo-generated carriers could involve two different procesIn addition, the
generally accepted model for loss mechanism due to escaping of carriers from
quantum dots to nonradiative recombination centers through the GaAs barrier ca
n not explain the quantum dot system with large thickness. The emission intens
ity quenches rapidly when the temperature rises to around 60 K, indicating the
existence of defect-related centers in the vicinity of InAs/GaAs interfaces.
At 0 ~ 80 K, the photoluminescence peak energies exhibit the temperature insen
sitive redshift for 3 and 4 Finally, the InAs/In0.53Ga0.47As heterojunction LE
Ds of 10 ML thick InAs active layers show a good diode rectifying characterist
ics at room temperature. These results indicate that the strained InAs single
quantum-well-like with separate confinement heterostructure LEDs grown on InP
substrate could have the potential to be operated at long wavelengths between
1.5 ~ 3 mm.

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