本實驗利用RF和DC測鍍系統濺鍍鈦鎳合金薄膜，並進行一系列之分析實驗
。由XRD分析結果指出，濺鍍出之未經退火薄膜具有非晶質結構，在退火
處理之後得到結晶合金薄膜，同時在TEM實驗中也獲得驗證；並且濺鍍製
程參數對薄膜結晶相有相當的影響。在RF濺鍍系統中，在低濺鍍功率且低
濺鍍壓力時及高濺鍍功率且高濺鍍壓力時，其結晶相以B2相為主；在DC濺
鍍系統中，在低濺鍍壓力下，其結晶相以B19'相為主。由EPMA分析結果指
出，其鈦成分略低於靶材成份(Ti51Ni49)，並且其Ti含量分佈與薄膜厚度
分佈有正相關。由四點電阻量測分析結果指出，薄膜Ms點變態溫度皆在室
溫附近，在高濺鍍功率下濺鍍會造成較大的變態溫度差(As-Ms)。由SEM破
斷面的觀察發現，較高濺鍍壓力易產生柱狀組織結構；在觀察薄膜厚度分
佈發現濺鍍製程條件對薄膜厚度分佈有影響。由粗糙度實驗得知，薄膜表
面粗糙度在10nm以下。最後利用紅外線加熱的特性，進行薄膜結晶活化能
的研究，得到TiNi薄膜的活化能約為68.8仟卡/莫耳。

The amorphous thin film TiNi shape memory alloys(SMA) has been
made by sputtering successfully, and crystallized after heat
treatment at 600 C. InRF sputtering system, the primary
crystalline phase of thin film is B2 phaseat the conditions of
both lower sputtering power and pressure or both
highersputtering power and pressure. In DC sputtering system,
the primary crystalline phase is B19' phase at lower sputtering
pressure. By EPMA analysis, the Ti compostion of thin film is
slightly lower than that of the target, and the distribution of
Ti composition is directly proportional to the thickness of thin
film. By four-point probe electric resistance measurement, Ms of
TiNi SMAs is at room temperature, and their
temperaturehysteresis(As-Ms) is larger at higher sputtering
power. The SEM observationsshow that the thin film is columnar
structure at higher sputtering pressure,and sputtering
parameters have important effects on the distribution of thin
film thickness. For the sputtered thin film, the surface
roughness is under10nm, and the activation energy of amorphous
crystalline is about 68.8 Kcal/mol.