在本研究中,探討聚苯胺(PANI)摻雜不同的酸(鹽酸,硫酸,磷酸,對甲苯
磺酸,雙二乙基己基 磷酸,雙苯基磷酸)的特性.由實驗得,聚苯胺摻雜雙二
乙基己基磷酸和雙苯基磷酸可溶於一般 的有機溶劑中.摻雜態的聚苯胺在
FTIR呈現往低波數位移的現象.在UV-vis中其吸收光譜波數比聚苯胺高
.顯示紅位移現象,另外,可藉由EPR中子活性化分析,算出摻雜算後在不同
溫度下產生的自旋濃度,結果顯示,其導電度 和自旋濃度有相關性,也就
是說電荷的轉移可藉由沿著高分子鏈上的順磁極子之遷移加以解釋.將聚
苯胺摻雜 雙苯基磷酸薄膜應用於金氧半場效電晶體(MOSFETs)的製備,可
得到良好n-type金氧半場效電晶體且在空氣中穩定度較其他聚苯胺電晶體
好.

In this study, studies on the characteristics of polyaniline
doped withvarious acids (hydrochloric acid, sulfuric acid,
phosphoric acid, p-toluenesulfonic acid monohydrate, bis(2-
ethylhexyl)hydrogen phosphateand diphenyl phosphate are to be
carried out. Polyaniline doped withbis(2-ethylhexyl)hydrogen
phosphate and diphenyl phosphate can dissolve in common organic
solvants. The FTIR characteristic bands of PANI dopedacid shift
lower wavenumber than those of the PANI base form. The maximum
UV-vis absorption spectra of PANI salts are located at higher
wavenumber than those of the base form, which exhibit a red
shift phenomena. The spin concentration of polyaniline salts can
be calculated by EPR spectra. The resultsexhibit the correlation
between the conductivity and spin concentration. In other
worlds, the charge transport can be explained solely by the
migration of paramagnetic polarons along the polymer chanis. The
metal-oxide-semiconductor field-effect transistors (MOSFET) are
frabricated with polyaniline doped with diphenyl phosphate as
the semiconducting layer. These FETs belong to n-typetransistors
and are found to be environmentally more stable than those
ofother polyaniline FETs.