利用分子束磊晶法，在傾斜角度為0、3、10和 15 度的砷化鎵基板上成長硒化錳鋅磊晶層。並且利用反射、穿透、光激螢光等實驗技術，量測樣品的能隙。隨著基板傾斜角度從0到15度的變化，樣品的能隙產生了4毫電子伏特(meV) 的紅位移。紅位移的產生是因為隨著基板傾斜的增加，使得階梯坑洞增加，而增加了鋅離子混入化合的機會。另外，在砷化鎵基板上亦成長30層硒化鋅(硒化錳鋅超晶格，硒化鋅(硒化錳鋅超晶格的激子躍遷能量為2.79電子伏特，比硒化鋅磊晶層的激子躍遷能量低22毫電子伏特(meV)。目前的研究結果，認為硒化鋅(硒化錳鋅超晶格為第二型(type-II)的結構。

Zn1(xMnxSe (x ( 0.78) epilayers were grown on the GaAs (001) substrate with tilt angle 0, 3, 10, and 15 degrees toward [001] by molecular beamepitaxy. The reflectivity, transmission, and photoluminescence experimentswere used to measure the energy gap of the epilayers. A red shift of 4 meV was found as the substrate tilt angle increase from 0 to 15 degrees. The red shift in band gap energy is attributed to the increasing incorporation of smaller Zn ion with the increase in the kink density which results from theincrease in the substrate tilt angle. In addition, the 30 pairs of ZnSe/Zn0.77Mn0.23Se layers were grown on the GaAs substrate. The excitonic transition of the ZnSe/Zn0.77Mn0.23Se superlattices structures was 2.79 eV, which is 22 meV lower than that of ZnSe epilayer. Current result implies the band alignment of ZnSe/Zn0.77Mn0.23Se superlattices structures is type-II.