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研究生:鄭淑雲
研究生(外文):Cheng, Shu Yun
論文名稱:鈷矽化物閘極之製作及利用NF3被覆改善閘極氧化層之整合性
論文名稱(外文):Fabrication of Cobalt Silicide Gates and Improving Integrity of Gate Oxide by NF3 Passivation
指導教授:劉堂傑, 楊文祿
指導教授(外文):Don-Gey Liu, Wen Luh Yang
學位類別:碩士
校院名稱:逢甲大學
系所名稱:電機工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1998
畢業學年度:86
語文別:中文
論文頁數:49
中文關鍵詞:複晶矽化物熱穩定性閘極氧化層
外文關鍵詞:PolycideThermal stabilityGate oxide
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在本論文中, 我們首先探討在不同製程條件下製成的BF2+佈植複晶矽
化鈷閘極對閘極氧化層之影響。在改變鈷厚度的實驗中,我們發現雖然較
厚的矽化鈷其熱穩定性較好,但在高回火溫度下,其崩潰電場及崩潰電荷
則有非常明顯之退化現象,我們推測此係金屬污染之故。另外,在改變離
子佈植劑量的實驗中,我們得到:無論在何種回火溫度下,劑量愈少,氧
化層之崩潰電荷特性愈好的結果,推測係硼離子穿透效應所導致。
本論文之另一主題為採用NF3熱處理來改善P型複晶矽化鈷閘極之熱穩定性
及其氧化層之完整性。在過去,有不少的研究指出離子佈植氟或氮係藉由
其增加介面能量及提高介電強度之能力來改善複晶矽化物閘極接觸特性。
在此,我們以傳統低壓爐管方式作NF3熱處理,期望能達到相同的效果。
實驗結果指出,在不同的回火溫度下,NF3對氧化層崩潰電荷之良率的改
善有很大的被覆作用,而相對於離子佈植氟、氮,此法具備低成本及高產
能之效益,非常適用於下一代元件之製造。

In this thesis, the impact of applying BF2+ implanted
cobalt polycide formed by the different process conditions as
gate electrode was firstly studied. From the results of varying
Co thickness, it was observed that breakdown field and charge to
breakdown decrease (Qbd) still occur even though no degradation
of silicide for Co-30nm sample annealed at 900C. We ruled out
the possibility that the degradation is due to metal
contamination. In the experimental of varying doseof BF2+
implant, it was observed that the lower dose BF2+ implanted
with, the better Qbd the gate oxide had irrespective of the
annealing temperature. It was attributed to the boron
penetration effect. In another topic, a process with NF3
treatment is proposed to improve the thermal stability of the
cobalt polycide p+-gate and the integrity of gate oxide. It has
been demonstrated in several researches that flourine or
nitrogen implantation can improve the thermal stability of the
polycide gate contact by increasing the interface energy and
dielectric strength. As proposed in this thesis, NF3 passivation
is used by the conventional Low Pressure(LP) thermal treatments.
In this experiment, the value and yield of charge to breakdown
(Qbd) has been dramatically improved by NF3 passivation
irrespective of the annealing temperature. Ascompare to the
technique of ion implantation, this method also provides alow
cost and high throughput for mass production.

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