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This thesis proposed the one-dimensional and two-dimensional physican models of n-channel MOSFETs based on semiconductor physics And then developed a simulator using finite element method to solve these coupled equations. the results of one-dimensional two-dimensional static and transient simulation show that when switching-on the electric field intensities are very strong near both the sourch and drain contacts. During the transient free electrons are pulled into the semiconductor layer from both the sourch and drain contacts. When reaching the steady state, the free electrons are pulled into the semiconductor layer from source contact and then flow from the semiconductor layer into the drain contact. At switching-off, the electric field intensities are very strong near both the source and drain contacts, and free electrons are pulled out of the semiconductor layer into both the source and drain contacts until reaching steady state. The switch-on and switch-off time constants are both about 10(-9) to 10(-8) sec. This two dimensional finite element simulator can be used to simulate the static and transient behaviors of other semiconductor devices.
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