臺灣博碩士論文加值系統

　　本論文根據實際半導體物理建立N-通道金氧半場效電晶體之一維及二維物理模型，並發展出一套適用於半導體元件模擬的有限元素法。由N-MOSFET一維及二維之靜態及動態的數值模擬發現，開啟時靠近源極、汲極接面的電場強度最強，電子由兩端點抽拉進半導體層，至穩態電子由源極流入，而由汲極流出，關閉時此兩處亦有最大電場強度，電子由兩端點抽出半導體層直到穩態。開啟及關閉時間為10-8∼10-9秒。此模擬器并可進一步模擬各種晶態半導體元件。

　　This thesis proposed the one-dimensional and two-dimensional physican models of n-channel MOSFETs based on semiconductor physics And then developed a simulator using finite element method to solve these coupled equations. the results of one-dimensional two-dimensional static and transient simulation show that when switching-on the electric field intensities are very strong near both the sourch and drain contacts. During the transient free electrons are pulled into the semiconductor layer from both the sourch and drain contacts. When reaching the steady state, the free electrons are pulled into the semiconductor layer from source contact and then flow from the semiconductor layer into the drain contact. At switching-off, the electric field intensities are very strong near both the source and drain contacts, and free electrons are pulled out of the semiconductor layer into both the source and drain contacts until reaching steady state. The switch-on and switch-off time constants are both about 10(-9) to 10(-8) sec. This two dimensional finite element simulator can be used to simulate the static and transient behaviors of other semiconductor devices.