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研究生:游坤和
研究生(外文):Yu, Kun Ho
論文名稱:鎳矽化物之生成相及其應力變化
論文名稱(外文):Study of Nickel-Silicon Reaction by In Situ Stress Measurement
指導教授:蔡哲正
指導教授(外文):Tsai Cho Jen
學位類別:碩士
校院名稱:國立中興大學
系所名稱:材料工程學研究所
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:1998
畢業學年度:86
語文別:中文
論文頁數:130
中文關鍵詞:矽化物應力
外文關鍵詞:NickelSilicideStress
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金屬矽化物已廣汎用於高速深次微米之CMOS元件,做為金屬接觸、閘
極電極、元件內連線之用。而NiSi是一值得考慮的自行對準矽化製程材料
,因其有應力低、電阻率低、形成溫度(>375oC)低、矽的消耗量少、熱穩
定範圍寬(375-811oC)、及片電阻不因線寬變窄而受相變限制等優點。於
本篇論文中,我們在真空退火同時以In situ雷射掃瞄的曲率量測方法研
究鎳矽化物之生成相及其應力變化。 對於Ni(100nm)/Si試片而言,以
固定5oC/min的升溫速率遞增溫度,則Ni->Ni2Si->NiSi->NiSi2依序形成
;且高溫退火時觀察到曲率變化有三個陡峭轉折點,其中第一(328oC)及
第二(375oC)轉折點分別代表Ni2Si及NiSi相變完全。而根據不同持溫溫度
及生成相的反應時間,繪出Arrhenius圖,得到NiSi的活化能為1.53eV;
根據不同升溫速率及生成相的反應溫度,以似Kissinger的分析方法得到
Ni2Si、NiSi及NiSi2的活化能分別為1.81、1.55及3.42eV。對於含氧的
Ni(100nm)/Si試片來說,氧抑制Ni2Si及NiSi的形成,故曲率變化只有一
個(470oC)很寬緩的的轉折。 另外,也研究Pd的作用[Ni(100nm/Pd(10
nm)/Si)],發現Pd抑制Ni2Si且延遲NiSi及NiSi2的形成;高溫退火的曲率
變化形態則稍異於Ni/Si試片,有兩個陡峭(268oC、420oC)及一寬緩(562
oC)轉折點。
Metal silicides have been widely used as ohmic contacts, gate
electrodes, and interconnects in high-speed deep submicron CMOS
devices. NiSi is a possible candidate as next generation
silicide material due to its low stresses, low resistivity, low
formation temperatures (>375oC), little silicon consumption,
extended thermal stability range (375-811oC), and no linewidth
dependence of the sheet resistance. In this thesis, the
evolution of stresses was studied using in situ curvature
measurements with scanning laser method during isochronal
annealing in a vacuum with pressure better than 3*10-6 Torr.
For Ni(100nm)/Si samples, the phase sequence of Ni->Ni2Si->
NiSi->NiSi2 occurs with increased annealing temperatures at a
constant ramping rate, 5oC/min. We observed three apparent
valleys in the curvature-to-temperature plot. In this case, the
first (328oC) and the second (375oC) valleys were identified to
be completely transformed phases of Ni2Si and NiSi,
respectively. According to Arrhenius plot of the duration for a
specific phase transformation at various annealing temperatures,
the activation energy was determined to be 1.53eV for NiSi
formation. The activation energies determined by Kissinger-like
analysis based on the various ramp rates ranging from 1oC/min to
30oC/min were 1.81, 1.55 and 3.42eV for Ni2Si, NiSi and NiSi2
formation, respectively. For Ni(100nm)/Si samples with
measurable oxygen impurity at Ni/Si interfaces, the formation
temperature for Ni2Si and NiSi were retarded. Therefore, there
was only one (470oC) broad valley in the curvature-to-
temperature plot. The effect of a thin Pd layer between Ni film
and Si substrate on the silicidation process includes changing
the formation sequence of the nickel silicide and retarding the
transformation of Ni2Si from NiSi. The curvature-to-temperature
plots for samples with thin Pd layers were different from those
without thin Pd layers. Two steep valleys (268oC and 420oC) and
one broad valley (562oC) were observed. The 420oC valley was
identified to be associated with formation of NiSi.
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