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研究生:丁維正
研究生(外文):Ting, Chris
論文名稱:鎳微元件電鑄過程中孔隙析鍍之研究
論文名稱(外文):Research of nickel plating within photoresists mask
指導教授:楊明長
指導教授(外文):Huang Ting-Chia, Cheng Huey-Ing
學位類別:碩士
校院名稱:國立成功大學
系所名稱:化學工程學系
學門:工程學門
學類:化學工程學類
論文種類:學術論文
論文出版年:1998
畢業學年度:86
語文別:中文
論文頁數:3
中文關鍵詞:鍍鎳光阻光罩析鍍
外文關鍵詞:nickelphotoresistsmaskplating
相關次數:
  • 被引用被引用:1
  • 點閱點閱:188
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  • 下載下載:0
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中文摘要
微機電系統(Micro-Electro-Mechanical System)簡稱MEMS,
與現今半導體積體電路技術均認為熱門並具未來發展潛力之研究領
域。本論文以近紫外光為曝照光源,依LIGA的製程製作深(30 m
至60 m)寬(100 m至1000 m)比介於1和0.06之間的孔隙膜,
再以此作為鑄模析鍍金屬鎳,然後將鍍件與基材脫離得到鎳金屬微
元件。本研究並探討鎳在高分子孔隙膜中,析鍍時之成核成長模式、
析鍍型態變化和析鍍速率。
本論文旨在利用LIGA 程序製造出機械微元件,而內容可分四
部份,第一部份是利用電化學分析法得知鎳在-0.80V (vs. Ag/AgCl)
或-0.85V (vs. Ag/AgCl)下,析鍍時主要傾向於逐漸成核-三維方向
成長模式,且尚有二維橫向析鍍之趨勢,故並非單獨向上析鍍。第
二部份探討鎳在孔隙膜中析鍍時,析鍍形態受流體力學的影響,在
薄膜(深3 m)有攪拌下析鍍,鎳鍍層之表面型態,隨時間增加由山
谷型(高6 m)轉為平台型(高12 m)再轉為山峰型(高25 m);在
厚膜(深30 m)有攪拌下析鍍表面型態,隨時間增加由山谷型(高
13 m)轉為斜坡型(高28 m)再轉為山峰型(高70 m);在厚膜無
攪拌下,表面型態均為平台型,第三部份探討鎳在孔隙膜中的析鍍
速率受溫度(60。 下析鍍速率大於25。 )、電位(-0.85V vs.Ag/AgCl
下析鍍速率大於-0.80V vs.Ag/AgCl)、攪拌和深寬比之影響,得知
電位、溫度和攪拌均可加速鎳離子之質傳速率,故提高電位、溫度
和攪拌均可明顯提升析鍍速率。第四部份是實際微機械成品的展示
與應用。


Abstract
The Micro-Electro-Mechanical System (MEMS) is a popular re-
search field like VLSI (Very-Large-Scale-Intergration) nowday
and for the future. In this project photoresists was
exposed under near UV light to produce groves with aspect
ratio from 1 to 0.06. According to the LIGA process,
nickel was then deposited within the photoresists mask
and separated from substrate surface. Furthermore, the
nucleation and growth of nickel deposition within the
photoresists groves were studied. The objective in this
project was to fabricate Microstructures by LIGA
process. There are four topics in this project. The first part
was to study the mechanism of nucleation-growthing by
electricanalytical method. The mechanism of
nucleation-growthing is leading to progre- ssive
nucleation and 3-dimension growtng when depositing on plate or
groves. The second part was to stuthe shape-changing of
deposite through the photoresist mask undr
hydrodynamic effect. The shape changed from vally
(6 m-height) to plateau (12 m-height) and then to
mountain (25 m-height) during deposition within thin layer
groves (3 m-depth) under agitation. The shape
changed from vally (13 m- height) to inclined
plain (28 m-height) and then to mountain (70 m-
height) during deposition within thick layer groves (30 m-depth)
under agitation. The shape changed from plain to
mountain during deposition within thick layer groves
(30 m-depth) under without agitation. The third
part was to study the depositing rate in groves (from 3 m to 70
m depth). This project indicated potential, and
temperature can acellerate the transfer rate of nickel,
increasing the steady current. Agitation can reduce the
thickness of diffusion layer, increasing the diffusion rate.
The depositing velocity is faster under -0.85V vs. Ag/AgCl than
-0.80V vs. Ag/AgCl, faster under 60。 than 25。 , and
faster under agitation than without agitation. The
last part was to introduce the photopicture of
microstructure produced by LIGA process.


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