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研究生:呂錕溢
研究生(外文):Lu, Kun-I
論文名稱:鈦披覆層對氮化鈦擴散障礙層性質之影響
論文名稱(外文):Effect of a Ti Overlayer on the Property of Reactively Sputtered TiN Diffusion Barrier
指導教授:陳貞夙陳貞夙引用關係
指導教授(外文):Jen-Sue Chen
學位類別:碩士
校院名稱:國立成功大學
系所名稱:材料科學(工程)學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:1998
畢業學年度:86
語文別:中文
論文頁數:155
中文關鍵詞:氮化鈦擴散障礙層反應性濺鍍熱處理
外文關鍵詞:TiTiNDiffusion BarrierReactive SputteredAnnealing
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! 中文摘要 本實驗研究目的在於探討鈦披覆層對氮化鈦擴散障礙
層性質之影響。實驗是以製作出矽/氮化鈦/鋁(或銅)與矽/氮化鈦/鈦/鋁(
或銅)相互對照之多層鍍膜試片,經過相同熱處理條件下,藉以判斷氮化
鈦與氮化鈦/鈦何者擴散障礙能力為佳。 氮化鈦薄膜是利用RF反應性
磁控濺射方法在氬氣/氮氣混合氣體氣氛下所生成,而鈦、鋁、銅金屬薄
膜僅在氬氣體氣氛下利用直流磁控濺射方法所形成。 當試片鍍製完成
,且經過不同熱處理溫度後,我們以歐傑電子能譜儀,掃描式電子顯微鏡
分析多層鍍膜元素縱深分佈及表面和橫截面形態,同時也量測多層膜之片
電阻,以及淺接面二極體之反偏壓漏電流的變化。 根據實驗分析結果
,對矽/氮化鈦/鋁試片而言,當加熱溫處理600oC/30分鐘片表面即出現零
星的凹坑,橫截面照片顯示此為矽原子流失後暴露出(111)面所形成。且
根據片電阻量測與淺接面二極體試片反偏壓漏電流量測結果,在600oC熱
處理溫度/30分鐘後,此二者數值均較未經熱處理試片大為增加,且其量
測值之分佈差異極大,部份淺接面二極體之漏電流達10-8A以上。 然
對矽/氮化鈦/鈦/鋁試片來說,同樣當熱處理條件為600oC/30分鐘後,試
片表面卻不會出現任何凹坑,且根據片電阻量測與漏電流量測結果發現
在600oC/30分鐘熱處理溫度後,此二者數值雖有較熱處理前增大,但不會
像矽/氮化鈦/鋁那樣有極大的分佈差異出現,所有淺接面二極體漏電流值
皆在5x10-9A以下。 所以藉由上述分析結果可以肯定矽/氮化鈦/鋁中
氮化鈦擴散障礙層能力在600oC熱處理溫度後早已失效,而矽/氮化鈦/鈦/
鋁在600oC熱處理後,層間反應較前者和緩,氮化鈦/鈦障礙層能力理應完
好。 對矽/氮化鈦/銅與矽/氮化鈦/鈦/銅之比較而言,當試片經過450
oC~750oC之熱處理後,矽/氮化鈦/銅試片之表面形態均較矽/氮化鈦/鈦/
銅試片為粗糙。經750oC熱處理後,矽/氮化鈦/銅之片電阻上揚成為未熱
處理前之兩倍,但矽/氮化鈦/鈦/銅試片之片電阻則維持與未熱處理前大
小相同。同時漏電流測試亦顯示加入鈦披覆層於氮化鈦及銅之間,有助於
熱處理後反偏壓漏電流的降低。
The aim of this study is to investigate the effect of a Ti
overlayer on the property of the reactively sputtered TiN
diffusion barrier. For this, we prepare the <Si>/TiN/Ti/Al (or
Cu) and <Si>/TiN/Al (or Cu) samples by sputtering deposition and
study their thermal stability by annealing the samples at
various temperatures (400-600oC for Al metallization; 450-850oC
for Cu metallization) for a duration of 30 min. All samples,
before and after annealing, were analyzed by the Auger electron
spectroscopy (AES) for elemental depth profiling, and by
scanning electron microscopy (SEM) for top-view and cross-
sectional morphologies. Sheet resistance and reverse-biased
leakage current of shallow junction diodes (with junction depth
of 0.15 mm) were also measured for electrical characterization.
For the comparison between <Si>/TiN/Ti/Al and <Si>/TiN/Al
samples, experimentalresults show that after annealing at 600oC
for 30 min. in Ar, pits have been observed on the surface of the
sample. Sheet resistance and diode leakage current of that
sample have also changed significantly from the value of the as-
deposited sample. The measurement data has a wide distribution
and some leakagecurrent values exceed 10-8A . This indicates
that the TiN diffusion barrierhas failed after annealing at
600oC for 30 min. However, for the <Si>/TiN/Ti/Alsample after
the same annealing, we have not observed any pit on the surface,
butsome bubble-shape hillocks, which may result from the
difference of the thermalexpansion coefficient(CTE) between the
film and the substrate. The sheet resistanceand the diode
leakage current of the 600oC-annealed <Si>/TiN/Ti/Al sample
also increasewhen comparing to the as-deposited sample. But the
leakage current values are alllower than 5x10-9 A. So we believe
that the barrier performance of TiN/Ti is better than that of
TiN. Compare the <Si>/TiN/Ti/Cu samples with <Si>/TiN/Cu
samples, after annealing at 450oC~750oCin H2, the top-view
morphologies of <Si>/TiN/Cu samples are generally rougher than
thatof <Si>/TiN/Ti/Cu. After 750oC /30min. annealing, the sheet
resistance of the <Si>/TiN/Cusample is twice as the value of the
as-deposited one. But the sheet resistance of <Si>/TiN/Ti/
Cuafter 750oC /30min. annealing stays about the same as that of
the as-deposited sample. Accordingto the measurement of diode
leakage current, we also find out that by interposing a Ti layer
betweenTiN and copper, the leakage current values of the post-
annealed samples are significantly reduced.

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