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研究生:陳大仁
研究生(外文):Chen, Da-Zen
論文名稱:脈衝KrF雷射退火及真空退火對Pd/Si0.76Ge0.24/Si(100)系統之界面反應研究
論文名稱(外文):Study of Interfacial Reactions of Pd/Si0.76Ge0.24/Si(100) by Pulsed KrF Laser and Vacuum Annealinng
指導教授:林文台
指導教授(外文):Lin Wen-Tai
學位類別:碩士
校院名稱:國立成功大學
系所名稱:材料科學(工程)學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:1998
畢業學年度:86
語文別:中文
論文頁數:1
中文關鍵詞:脈衝雷射真空退火金屬矽鍺化物
外文關鍵詞:Pd/Si0.76Ge0.24pulsed laservacuum annealingPd/Si0.76Ge0.24germanosilicide
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Abstract-The interfacial reactions of Pd/Si0.76Ge0.24 were
studiedby pulsed KrF laser annealing as a function of energy
densityand pulsed number. At an energy density of 0.1-0.2 J/cm2
a continuous germanosilicide layer commpossed of a low
temperature phase, Pd2(Si1-xGex), and a high tempperature phase,
Pd(Si1-xGex),was formed. In contrast to vacuum annealing Ge
segregation out of the germanosilicide layer and the strain
relaxation of the residualSi0.76Ge0.24 film could be effectively
suppressed by pulsed KrF laserannealinng at 0.1 J/cm2. Multiple
pulse annealing at 0.1 J/cm2 could further homogenize the Pd
concentraation of the germanosilicide ofthe germanosilicide
layer and promote the growth of Pd(Si1-xGex).Concurrently, the
smoothness of the germanosilicide layer was substantially
improved in comparsion with those grown by vacuum annealingat
temperature above 200℃. The studies also revealed that for a
multiplepulse annealing at 0.1 J/cm2 with a low repetition rate,
1 Hz, the evolution of phase formation and Pd diffusion could be
proceedeed by each individuallaser pulse.

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