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Abstract-The interfacial reactions of Pd/Si0.76Ge0.24 were
studiedby pulsed KrF laser annealing as a function of energy
densityand pulsed number. At an energy density of 0.1-0.2 J/cm2
a continuous germanosilicide layer commpossed of a low
temperature phase, Pd2(Si1-xGex), and a high tempperature phase,
Pd(Si1-xGex),was formed. In contrast to vacuum annealing Ge
segregation out of the germanosilicide layer and the strain
relaxation of the residualSi0.76Ge0.24 film could be effectively
suppressed by pulsed KrF laserannealinng at 0.1 J/cm2. Multiple
pulse annealing at 0.1 J/cm2 could further homogenize the Pd
concentraation of the germanosilicide ofthe germanosilicide
layer and promote the growth of Pd(Si1-xGex).Concurrently, the
smoothness of the germanosilicide layer was substantially
improved in comparsion with those grown by vacuum annealingat
temperature above 200℃. The studies also revealed that for a
multiplepulse annealing at 0.1 J/cm2 with a low repetition rate,
1 Hz, the evolution of phase formation and Pd diffusion could be
proceedeed by each individuallaser pulse.
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