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Abstract-The interfacial reactions of Pd/Si0.76Ge0.24 were studiedby pulsed KrF laser annealing as a function of energy densityand pulsed number. At an energy density of 0.1-0.2 J/cm2 a continuous germanosilicide layer commpossed of a low temperature phase, Pd2(Si1-xGex), and a high tempperature phase, Pd(Si1-xGex),was formed. In contrast to vacuum annealing Ge segregation out of the germanosilicide layer and the strain relaxation of the residualSi0.76Ge0.24 film could be effectively suppressed by pulsed KrF laserannealinng at 0.1 J/cm2. Multiple pulse annealing at 0.1 J/cm2 could further homogenize the Pd concentraation of the germanosilicide ofthe germanosilicide layer and promote the growth of Pd(Si1-xGex).Concurrently, the smoothness of the germanosilicide layer was substantially improved in comparsion with those grown by vacuum annealingat temperature above 200℃. The studies also revealed that for a multiplepulse annealing at 0.1 J/cm2 with a low repetition rate, 1 Hz, the evolution of phase formation and Pd diffusion could be proceedeed by each individuallaser pulse.
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