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Titanium nitride (TiN) films were prepared by radio-
frequency (RF) capacitively coupled plasma-enhanced chemical
vapor deposition (PECVD) using TiCl4 and NH3 as precursors. By
varying the flow rate of the precursors, substrate temperature,
RF power and chamber pressure, the film characteristics, such as
deposition rate, elemental concentration, resistivity and
surface morphology are investigated by -step, Auger electron
spectroscopy, four-point probe and scanning electron microscopy
for the films, respectively. With TiCl4/NH3 flow rate ratio
of 40/1.5 and chamber pressure of 0.3Torr, oxygen concentratio
of the TiN films decreases from 30at% to 7at% and N/Ti atomic
ratio increases from 0.78 to 1.15 as the RF power increases from
50W to 150W. In consistency with the reduction of the oxygen
concentration, the film resistivity decreases as the RF power
increases. The lowest film resistivity is 131-cm, which is
obtained from the film deposited at 450℃ and with RF power of
150W. No carbon and chlorine singnal is detected by Auger
electron spectroscopy. The content of the two elements in the
TiN films is under the detection limit.
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