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Titanium nitride (TiN) films were prepared by radio- frequency (RF) capacitively coupled plasma-enhanced chemical vapor deposition (PECVD) using TiCl4 and NH3 as precursors. By varying the flow rate of the precursors, substrate temperature, RF power and chamber pressure, the film characteristics, such as deposition rate, elemental concentration, resistivity and surface morphology are investigated by -step, Auger electron spectroscopy, four-point probe and scanning electron microscopy for the films, respectively. With TiCl4/NH3 flow rate ratio of 40/1.5 and chamber pressure of 0.3Torr, oxygen concentratio of the TiN films decreases from 30at% to 7at% and N/Ti atomic ratio increases from 0.78 to 1.15 as the RF power increases from 50W to 150W. In consistency with the reduction of the oxygen concentration, the film resistivity decreases as the RF power increases. The lowest film resistivity is 131-cm, which is obtained from the film deposited at 450℃ and with RF power of 150W. No carbon and chlorine singnal is detected by Auger electron spectroscopy. The content of the two elements in the TiN films is under the detection limit.
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