本實驗以微波電漿輔助化學氣相沉積法在(100)晶面的矽基板上成長
具有(100)高度方向性之鑽石薄膜;然後以此薄膜作為基板,成長一層摻硼
雜質之 P-type 鑽石薄膜半導體. 我們再藉由 X-ray 粉末繞射儀與拉
曼散射進行薄膜之微觀結構鑑定,掃描式電子顯微鏡及原子力顯微鏡觀察
薄膜之表面型態. 此外,我們還利用HP4284A LCR測試器作為量測薄膜交
流頻電傳導性質之工具;從溫度與頻率之相關性,我們推論摻硼雜質半導體
鑽石薄膜具有跳躍傳輸之機制.

A highly oriented, (100) textured diamond film was grown on
the substratesof silicon (100), followed by the deposition of an
epitaxial boron-doped layer in microwave plasma-assisted
chemical vapor deposition (MPCVD). Using X-ray diffraction
and RAman spectroscopy to identify the microstructure,scanning
electron microscopy (SEM) and atomic force microscopy (AFM) to
observethe morphologies of sample surface. Measurements of the
a.c.conduction was determined by HP4284A LCR meter. From the
temperature and the frequency dependencies we concludethat
boron-doped diamond films have the mechanism of hopping
transport.