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Abstract In this thesis , the electrical and optical characteristics of InAs detectorswith various passivation materials have been studied . By the I-V measurement ,we found that InAs diodes with sulfide treatment or ZnS/native-oxide passivationlayer can reduce leakage current effectively . By comparing the signal-to-noise-ratio and specific detectivity ( D* ) , the results indicate that InAs infrareddetectors work best at 77 K . Besides , it also indicates that the InAs detectorwith ZnS/native-oxide passivation has the best signal- to-noise ratio andspecific detectivity .Its maximum signal-to- noise ratio and specific detectivityvalue are about 426.86 and 1.67*1010 cmHz1/2/W respectively . By summarizing theresults the electrical and the optical characteristics of InAs detectors , wecan conclude that the two-layer stacked ZnS/native-oxide structure is anexcellent and suitable passivation for InAs infrared detector .
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