Abstract In this thesis , the electrical and optical
characteristics of InAs detectorswith various passivation
materials have been studied . By the I-V measurement ,we found
that InAs diodes with sulfide treatment or ZnS/native-oxide
passivationlayer can reduce leakage current effectively . By
comparing the signal-to-noise-ratio and specific detectivity (
D* ) , the results indicate that InAs infrareddetectors work
best at 77 K . Besides , it also indicates that the InAs
detectorwith ZnS/native-oxide passivation has the best signal-
to-noise ratio andspecific detectivity .Its maximum signal-to-
noise ratio and specific detectivityvalue are about 426.86 and
1.67*1010 cmHz1/2/W respectively . By summarizing theresults the
electrical and the optical characteristics of InAs detectors ,
wecan conclude that the two-layer stacked ZnS/native-oxide
structure is anexcellent and suitable passivation for InAs
infrared detector .