本文展示兩個以封裝的PHEMT電晶體製造之射頻模組零組件。
其中一個是震盪器，分別有兩個樣本被設計其震盪頻率於22 GHz 及25
GHz。量測的結果顯示大約較理論值低約1GHz。震盪的現象已經被證實在
上微波頻帶。同時模擬的過程及實驗結果將被展示。
另外一個是使用先進的表面黏著技術的PHEMT電晶體發展及成功地測試的
高效率、單級、13 GHz 到 22 GHz 寬頻帶放大器。增益平坦度在13 GHz
到22 GHz可以達到 2.86 dB±0.75 dB。同時以LibraTM 模擬的結果與實
際量測雙埠的散射參數能取得相當一致的結果。這兩個元件所展示的是大
量、低價的生產及短暫的折返時間在上微波頻帶積體電路是可行的。

In this thesis, two important components within the RF modules
incorporating packaged PHEMT will be presented.
One is oscillator. Two samples are designed to meet oscillation
conditions at 22 GHz and 25 GHz, respectively. The measured
results are approximate offset lower 1 GHz from theoretical
calculations. The phenomenon of oscillation has been verified
upper microwave band. Both simulation procedures and measured
results are presented.
The other is a high-performance, single-stage, 13-to-22 GHz
broadband amplifier that has been developed and tested
successfully employing the advanced SMT PHEMT. Gain flatness of
2.86 dB±0.75 dB between 13 GHz and 22 GHz is achieved. Both
simulated results based on LibraTM and measured two-port
scattering parameters of the amplifier agree excellently.
Two components are demonstrating that large volume, low cost
production and short turn around time of upper-microwave-
frequency integrated circuits are feasible.