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In this study, AgGaS2 AgGaSe2 and AgGa(S0.1Se.9)2 single crystal were growth by Vertical Bridgman method. By changing the growth rate,we can decreased the crack occured in the crystals. Using X-ray PL,FTIR,DTA Raman spectrum, EPMA these measurements, we find these crystals' electrical and optical properties. The linear relationship was found between the bandgap and lattice constant of axis a and c within these crystals. From FTIR meansurement, we obtain transmission range of these crystals AgGaS2 AgGaSe2 and AgGa(S0.1Se.0.9)2:0.48-14um 0.705-19.45um 0.679-19.275u m respectively. As for Raman shift, cruystal of AgGa(S0.1Se0.9)2 shows the result simlar to those of the AgGaSe2 .
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