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In this thesis, the metal-semiconductor-metal photodetectors
(MSM-PD's) with a hydrogenated amorphous silicon (a-Si:H) film
deposited on the Corning 7059 glass substrate were studied. The
i-a-Si:H and n-a-Si:H films were deposited on the Corning 7059
glass substrate with a RF capacitor-coupled parallel-plate
plasma enhanced chemical vapor deposition (PECVD) system. The
device a with reflection layer had a higher responsivity than
that of the similar one without reflection layer. To increase
the responsivity of atop-electrode device, the doped n-a-Si:H
was used as the light-absorbing layer alternatively. Also, the
transparent ITO film was as the device top-electrodes, and,
experimentally,a further increase of the device responsivity was
observed. The top-electrodedevice fabricated on the Corning 7059
glass substrate had the better DC I-Vcharacteristics and its
peak wavelength of spectral response was around 550 nm.
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