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研究生:林淑君
研究生(外文):Lin, Shu-Chun
論文名稱:低介電常數聚矽氧烷及聚醯亞胺高分子薄膜之特性研究
論文名稱(外文):Characterization of Low Dielectric Constant Polysiloxanes and Polyimide Polymer
指導教授:陳文章陳文章引用關係戴寶通戴寶通引用關係---
指導教授(外文):Wen-Chang ChenBau-Tong Dai
學位類別:碩士
校院名稱:國立臺灣大學
系所名稱:化學工程學系研究所
學門:工程學門
學類:化學工程學類
論文種類:學術論文
論文出版年:1998
畢業學年度:86
語文別:英文
論文頁數:2
中文關鍵詞:低介電常數旋轉塗佈化學機械研磨
外文關鍵詞:Low kSpin CoatingCMP
相關次數:
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化學機械研磨(Chemical Mechanical Polishing,CMP)技術已成為深次微米半導體製程不
可或缺之製程技術。這主要是因為CMP技術可達到全面平坦化之目的以及其在多重內連線
及開發新元件構造等方面有重要之應用。而由CMP技術之研磨液,研磨墊及研磨機台參數之
搭配可用來研磨不同之半導體薄模材料,如介電膜或金屬膜。而低介電常數高分子介電膜
在近年來亦成為重要之半導體薄膜材料,這主要是由於它可用來降低因IC線寬縮小所引起
的能量消耗,訊號傳播速度減緩及雜訊等問題。因此國際性電子材料會議VMIC及MRS近年
來皆有Symposium討論低介電常數材料及其CMP研磨技術 本研究針對兩種類型重要之高
分子介電材料作製膜及其性質探討:一種是聚矽氧烷高分子:包括Dow Corning 公司之FOX
-14(HSQ)和Allied Signal公司的SOG-418(MSQ); 另一種是聚醯亞胺類:包括BPDA/PDA、PM
DA/ODA及6FDA/ODA,這些高分子材料分別經由不同的旋轉塗佈及烘烤步驟製膜。由FTIR光
譜圖可顯示所製備高分子薄膜之分子結構特性。而薄膜之折射率、厚度、熱應力及表面粗
糙度亦分別被分析鑑定。由實驗結果顯示分子結構對所探討之物理性質影響甚鉅。這五種
材料的介電常數的範圍在2.453-2.996之間。此結果可由分子結構所引起的單位體積極性
變化來解釋。而以ZrO2研磨劑之CMP結果顯示FOX-14的研磨速率比SOG-418快,此結果亦可
由SOG-418鍵結中含有22%之有機成份導致薄膜表面具有疏水性解釋。ZrO2固含量之增加可
增加其研磨速率,相對地亦提高了被研磨薄膜的不均勻性,由實驗結果及IEP (isoelectr
onic point) 的探討可發現研磨劑的pH值的確對FOX-14和SOG-418研磨速率造成影響。

Chemical-Mechanical Polishing (CMP) technique has become one of the major plan
arization processes in advanced semiconductor manufacturing. CMP technique can
achieve global planarization and it shows potential applications in multileve
l interconnect and new IC structure design. Novel CMP Processes combined new f
ormulations in slurry and pads for polishing dielectric and metal films have b
een developed rapidly. Low dielectric constant polymers emerge as a potential
candidate of a dielectric film for deep sub-micron processes due to the consid
eration of power consumption, signal propagation delay, and crosstalk between
signal lines. Hence, development of low dielectric constant materials applied
in IC interconnects has become a major issue. However, study on the CMP charac
teristics of low dielectric constant polymer has just started. Hence, the poor
understanding of the CMP mechanism is resulted in the difficulty of applying
low dielectric constant polymers in IC fabrcation. In this study, two major cl
asses of low dielectric constant polymers polysiloxanes; Dow Corning FOX-14 (H
SQ) and Allied Signal 418 (MSQ); and polyimides; BPDA/PDA, PMDA/ODA, and 6FDA/
ODA. These polymers were coated and cured under different processing condition
s. The chemical structures of the studied polymers were well characterized by
the FTIR spectroscopy. The characteristics of the prepared films surface refr
active index, thermal-stress and surface roughness were also investigated. The
experimental results showed that the molecular structures had significant eff
ects on the studied physical properties. The dielectric constants of the five
materials were in the range of 2.453-2.996. Thication. In this study, two majo
r ces of low dielectric constant polymersawere processed and characterized: po
lysiloxanes; Dow Corning FOX-14 (HSQ) and Allied Signal 418 (MSQ); and polyimi
des; BPDA/PDA, PMDA/ODA, and 6FDA/ODA. These polymers were coated and cured un
der different processing conditions. The chemical structures of the studied po
lymers were well characterized by the FTIRwere processed and
characterized: polysiloxanes; Dow Corning FOX-14 (HSQ) and
Allied Signal 418 (MSQ); and polyimides; BPDA/PDA, PMDA/ODA,
and 6FDA/ODA. These polymers were coated and cured under
different processing conditions. The chemical structures of the
studied polymers were well characterized by the FTIR
spectroscopy. The characteristics of the prepared films
surface refractive index, thermal-stress and surface roughness
were also investigated. The experimen

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