臺灣博碩士論文加值系統

中文摘要
TiNi合金中添加0.5~1 at.% Si仍具有良好之形狀記憶效應。Ti50Ni50-
XSiX系列之變態溫度較高，而Ti50-XNi50SiX系列則隨著Si的添加而急遽
下降，推斷在TiNiSi三元合金中，Si的行為較類似Ni。由顯微組織中發現
有Ti2Ni析出於晶界，而另有富鈦之非計量TiNiSi及富鎳之TiNiSi三元析
出物大多析出於基地。TiNi薄膜與矽晶圓之界面研究發現400℃及500℃退
火試片於界面可以觀察到三角形島狀區域出現，隨著退火溫度的上升，島
狀物往Si基材生長，並且由XRD確定在600℃以上的溫度，此區域為NiSi2
，其在基材上以磊晶方位關係成核成長，並沿基材之(100)方位成長，由
此判斷
關鍵詞：TiNiSi形狀記憶合金、TiNi薄
膜、(100)Si晶圓、界面研究、擴散接合。

Experimental results show that the addition of 0.5~1 at.% Si
into TiNi alloy behaves good shape memory effect. The Ms
temperature of Ti50Ni50-XSiX alloys is much higher, but that of
Ti50-XNi50SiX alloys can be lowered by increasing Si addition.
We conclude that Si behaves as Ni in TiNiSi alloys. In TiNiSi
alloys, Ti2Ni is found around grain boundaries. Non-
stoichiometric Ti-rich and Ni-rich TiNiSi precipatates are also
found in the matrix and grain boundaries. The TiNi thin film
interfacial reaction with (1
Keyword: TiNi Shape Memory Alloys, TiNi Thin Film, (100)Si
Wafer, Interface Study, Diffusion Bonding.