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研究生:陳秀宗
研究生(外文):Jong Chen
論文名稱:利用兩次氫退火方法對DRAM良率改善之研究
論文名稱(外文):The study of DRAM yield improvement by using two Times of hydrogen annealing
指導教授:洪 端 佑 博 士
學位類別:碩士
校院名稱:中華大學
系所名稱:電機工程學系碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1999
畢業學年度:87
語文別:中文
論文頁數:47
中文關鍵詞:動態隨機存取記憶體氫退火良率改善
外文關鍵詞:DRAMhydrogen annealingyield improvement
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動態隨機存取記憶體(Dynamic Random Access Memory ; DRAM) 是所有半導體產品中最重要產品之一,要增加DRAM工業競爭力則必須要提昇DRAM產品良率,但受限於現實提昇良率的限制,其中較低成本方法則是為減少漏電流,以減少漏電流來增加回復時間達到提昇良率的目的。
目前要改善漏電流皆是使用氫退火製程,但以目前常用之一次氫退火製程不能完全改善漏電流,經由測試可知應為氫原子並未充分修補矽-氧化矽界面,故本論文提出以兩次氫退火製程方法作DRAM良率提昇之研究,希望以二次氫退火製程的方法降低電晶體中矽-氧化矽界面表面陷阱的密度,進而改善漏電流,改善回復時間以提高良率。
經由本論文的實驗得知當使用二次氫退火製程時,DRAM產品的回復時間將會由161 ms增加到 202 ms有大幅改善,良率也會大幅提昇9.2%,由測試可知為電晶體的漏電流減少為主要改善的原因,可見若使用二次氫退火製程取代現有一次氫退火製程將可大幅降低製造成本與增加DRAM產品良率。

DRAM (Dynamic Random Access Memory) is one of the most important products in the semiconductor worlds. In the mass production competition of DRAM products, the high product yield is a key element to win the industrial competition. Amount the limited methods for improving the product yield, it is a lower cost solution to reduce the leakage current of transistors since the leakage current will decrease the data refresh time and cause the yield lost.
One time of hydrogen annealing, which can fix the interfacial traps between silicon and silicon dioxide, is a widely-use method for improving the leakage current in present. However, it is found that one time of hydrogen annealing can not completely fix the traps. Therefore, two times of hydrogen annealing is proposed in this study for reducing the interfacial traps to lower the leakage current.
In my experiment, I found the refresh time of the experiment lots was improved from 161 ms to 202 ms, and 9.2% of yield was gained by two times of hydrogen annealing. After some measurements, the reduction of leakage current in transistors was found to be the major reason for yield improvement. Consequently, the product yield will be dramatically improved and the production cost will be greatly reduced by two times of hydrogen annealing instead of one time of hydrogen annealing

目錄
摘要…………………………………………………………………….…I
Abstract………………………………………………………………..…II
誌謝……………………………………………………………………..III
目錄…………………………………………………………………..…IV
圖目錄…………………………………………………………………..VI
第一章 諸論……………………………………………………………..1
第二章 DRAM理論背景………………………………………………..4
2-1 DRAM架構………………………………………………….4
2-2 DRAM動作原理……………………………………………4
2-3 DARM氫退火製程理論背景……………………………….5
2-4 DRAM量測………………………………………………….6
2-4-1 DRAM良率測試……………………………………….7
2-4-2回復時間測試………………………………….………..7
2-4-3漏電流測試…………………………………….………..8
第三章 實驗方法…………………………….……….….……..…...…10
3-1 實驗目的……………………………………………….…..10
3-2 實驗步驟……………………………………………….…..10
3-2-1 實驗一…………………………………………………11
3-2-2 實驗二…………………………………………………11
第四章 結果與分析……………………………………………………13
4-1 實驗結果…………………………………………………13
4-1-1 良率測試結果………………………………….…….13
4-1-2 回復時間測試結果…………………………………..13
4-1-3 漏電流測試結果………………………………..……14
4-2 實驗結果分析……………………………………………15
4-2-1 DARM良率測試與回復時間分析………………….15
4-2-2 DRAM回復時間與漏電流分析…………………….15
4-2-3 DRAM漏電流與兩次氫退火製程分析…………….16
第五章 結論與未來展望……………………………………………..17
5-1 結論………………………………………………………17
5-2 未來展望…………………………………………………17
參考文獻…………………………………………………………………19

參考文獻
[1] G. Cheroff, F. Fang, and H. Hochberg, “Effect of low temperature annealing on the surface conductivity of Si in the Si-SiO2-Al system,” IBM J., vol. 8, pp. 416-421, 1964.
[2] P. Balk, “Effect of hydrogen annealing on silicon surfaces,” in Electro-chem. Soc. Spring Meeting, San Francisco, CA, pp. 237-240,Abstr. No. 109, 1965.
[3] I. C. Kizilyalli, J. W. Lyding, and K. Hess, “Deuterium post metal annealing of MOSFET for improved hot carrier reliability,” IEEE Electron Device Lett., vol. 18, pp. 81-83, 1997.
[4] Brent Keeth, “A DRAM circuit design tutorial,” Micron
Technology Inc., pp. 8-12, 1995.
[5] Stanley Wolf, ”Silicon processing for the VLSI ERA,”
vol. 2, Lattice Press, pp. 587-597, 1990.
[6] Dieter K. Schroder, ”Semiconductor material and device characterization,” John Wiley & Sons Inc, pp. 337-441, 1998.
[7] Stanley Wolf, ”Silicon processing for the VLSI ERA,”
vol. 3, Lattice Press, pp. 117-126, 1995.
[8] C. Kizilyalli, W. Lyding, and K. Hess, “Improvement of Hot Carrier Reliability with Deuterium Anneals for Manufacturing Multilevel Metal/Dielectric MOS Systems,” IEEE Electron Device Lett., vol. 19, pp. 444-446, 1998.
[9] 沈志隆 著, “應用Nd :YLF雷射於雷射修補技術之研究” 中華大學1998碩士班論文.
[10] 郭正邦 著, “CMOS數位IC” McGraw-Hill, pp. 87-114 民85.
[11] 李嗣涔 著, “半導體元件物理” 三民書局, pp. 219-239 民84.
[12] 莊達人 著, “VLSI製造技術” 高立圖書, pp. 357-367 民83.

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