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研究生:吳良振
研究生(外文):Wu Liang-Jenn
論文名稱:表面聲波元件之設計研究
論文名稱(外文):The design study of surface acoustic wave devices
指導教授:高慧玲高慧玲引用關係
指導教授(外文):Kao Hui-Ling
學位類別:碩士
校院名稱:中原大學
系所名稱:電子工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:1999
畢業學年度:87
語文別:中文
論文頁數:83
中文關鍵詞:表面聲波元件Crossed-field ModelCOM模型
外文關鍵詞:SAW devicesCrossed-field ModelCOM Model
相關次數:
  • 被引用被引用:1
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表面聲波現象自1855年英國人Rayleigh發現以來,直到1965年由White, R.M.及Voltmer. F.W.在壓電晶體上鍍上指叉狀電極,而開始了表面聲波元件應用於射頻(RF)訊號處理的領域。表面聲波元件較傳統的R、L、C濾波器來的好,是因為體積小且為單一之元件,特性不易受外界環境影響而造成誤差。表面聲波元件之最大的優點是製程與半導體相似,可望能與一般半導體積合。
鑒於元件製程方面需多方的配合及製作,因此本論文使用Matlab軟體來模擬各元件的特性,希望在製作元件前用理論分析一理想值,包含因各個參數的變化所造成的改變,以及推導出各個參數的最佳化值,以期製作符合電路需求之元件,並且避免造成元件之過大。此外,我們也將所設計之表面聲波元件作在傳統壓電材料鈮酸鋰上,然後將模擬結果製程結果作一對照,並以此來修正等效模型中的參數,使得模擬值與實際值能夠較契合。
在本研究中,我們將分基本濾波器、共振器與sinc weighting共振器三種不同的設計方式,分別用Crossed-field Model與COM模型來等效基本濾波器與共振器,探討各參數的變化對元件的特性所造成的影響,以及各參數的最佳設計值。然後可得這三種不同的聲波元件各個優缺點是為何,以便將此設計條件應用於表面聲波元件製作之用。
The phenomenon of elastic vibration of the surface of solids was demonstrated by Lord Rayleigh in 1885. Until 1965, the discovery was applied to signal processing, following the invention, by White and Voltmer, of the surface acoustic waves (SAW) interdigital transducer. SAW devices are better than traditional RLC filter, because its volume is smaller which can set to be one chip. The characteristic of SAW devices are affected little by environment. The excellence of SAW devices is that the fabrication is similar to semiconductor process, and it is possible to be integrated within one chip.
In order to fabricate the SAW devices which meet the requirements of circuit systems, and to prevent that the size of the devices to be too large, we use Matlab in this study to simulate the characteristics of each device. The ideal values, the effects of each parameters as well as the optimum performance, are analyzed by simulation before fabrication process. In addition, we make SAW devices on piezoelectric substrate, and compare the simulative performance and real one of each device to adjust the parameters in equivalent circuit model, so that the simulative results can be trustable.
This thesis is divided into three parts of design methods, including filters、resonators and sinc weighting resonators. Filters and resonators are simulated by Crossed-field Model and COM Model. The characteristic of cells that are affected by the alteration of each parameter was examined, and the ideal value of each parameter was found to derive the advantages and shortcomes of each different cells, and then apply the design rules to SAW device fabrication.
中文摘要………………………………………………………………..Ⅰ
英文摘要………………………………………………………………..Ⅱ
誌謝……………………………………………………………………..Ⅲ
目錄…….…………………………………………………………...…..Ⅳ
圖目錄……………………………………………………………...…...Ⅵ
表目錄…………………………………………………………………..Ⅹ
第一章 簡介……………………………………………………………1
第二章 原理……………………………………………………………3
2.1 濾波器 (Filter)………………………………………………...3
2.1.1 基本濾波器的原理………………………………………..3
2.1.2 基本濾波器的等效模擬…………………………………..4
2.1.3 影響濾波器效能的原因…………………………………..6
2.2 共振器 (Resonator)……………………………………………7
2.2.1 Two-Port Resonator之原理架構…………………………..7
2.2.2 Two-Port Resonator之等效模型…………………………..7
2.3 指叉sinc weighting共振器…………………………………..11
Fig 2.1 ~ Fig 2.14……………………………………………...12~20
表2.1………………………………………………………………21
第三章 實驗方法……………………………………………………..22
3.1 模擬方面……………………………………………………..22
3.2 製程方面……………………………………………………..22
3.2.1 光罩的設計………………………………………………22
3.2.2 SAW元件製作…………………………………………..23
3.2.3 SAW元件量測…………………………………………..24
Fig 3.1 ~ Fig 3.5…………………………………………….…25~28
第四章 結果與討論…………………………………………………..29
4.1 基本濾波器…………………………………………………..29
4.1.1 模擬結果…………………………………………………29
4.1.2 製程結果與模擬結果的比較……………………………31
4.2 共振器………………………………………………………..32
4.2.1 模擬結果…………………………………………………32
4.2.2 製程結果…………………………………………………34
4.2.3 模擬結果與製程結果的比較……………………………35
4.3 sinc weighting共振器…………………………………………36
Fig 4.1 ~ Fig 4.23……………………………………………...39~62
表4.1~表4.6………………………………………………….63~67
第五章 結論…………………………………………………………..68
5.1 基本濾波器…………………………………………………..68
5.2 共振器………………………………………………………..68
5.3 sinc weighting共振器………………………………………..69
5.4 基本濾波器、共振器與sinc weighting共振器的比較…….69
References………...…………………………………………………….71
附錄……………………………………………………………………..76
附錄A 基本濾波器………………………………………………76
附錄 B 共振器…...……………………………………………….78
自傳……………………………………………………………………..83
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